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FLK017XP

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The FLK017XP from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 14.5 GHz, Power 19.5 to 20.5 dBm, Power(W) 0.09 to 0.11 W, P1dB 19.5 to 20.5 dBm, Power Gain (Gp) 7 to 8 dB. Tags: Chip. More details for FLK017XP can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLK017XP
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 14.5 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    General Purpose, Ku-Band
  • Application
    Ku Band, General Purpose
  • Frequency
    14.5 GHz
  • Power
    19.5 to 20.5 dBm
  • Power(W)
    0.09 to 0.11 W
  • P1dB
    19.5 to 20.5 dBm
  • Power Gain (Gp)
    7 to 8 dB
  • Power Added Effeciency
    0.26
  • Noise Figure
    2.5 dB
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    60 to 90 mA
  • Thermal Resistance
    65 to 130 Degree C
  • Package Type
    Chip
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 175 Degree C

Technical Documents
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