1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Sumitomo Electric Device Innovations
  6. FLM0910-15F

FLM0910-15F

Download Datasheet
Request Quote

Note : Your request will be directed to Sumitomo Electric Device Innovations.

FLM0910-15F Image

The FLM0910-15F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 9.5 to 10.5 GHz, Power 41 to 42 dBm, Power(W) 12.59 to 15.85 W, P1dB 41 to 42 dBm, Power Gain (Gp) 6.5 to 7.5 dB. Tags: Flanged. More details for FLM0910-15F can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FLM0910-15F
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 9.5 to 10.5 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Communication, Wireless Infrastructure
  • Application Type
    X-Band, Communication Band
  • Application
    Communication System
  • Frequency
    9.5 to 10.5 GHz
  • Power
    41 to 42 dBm
  • Power(W)
    12.59 to 15.85 W
  • P1dB
    41 to 42 dBm
  • Power Gain (Gp)
    6.5 to 7.5 dB
  • Power Added Effeciency
    0.32
  • Supply Voltage
    10 V
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    4000 to 5000 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    2.3 to 2.6 Degree C/W
  • Package Type
    Flanged
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Saturated Drain Current : 7200 to 10800 mA, Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : 1.2 dB, Channel Temperature Rise : 100 Degree C, Forward Gate Current : 16 mA, Channel Temperature : 175 Degree C

Technical Documents
View details on the manufacturer's website
View similar products