1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Sumitomo Electric Device Innovations
  6. FLM1314-3F

FLM1314-3F

Download Datasheet
Request Quote

Note : Your request will be directed to Sumitomo Electric Device Innovations.

FLM1314-3F Image

The FLM1314-3F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 13.75 to 14.5 GHz, Power 34 to 35 dBm, Power(W) 2.51 to 3.16 W, P1dB 34 to 35 dBm, Power Gain (Gp) 5 to 5.5 dB. Tags: Flanged. More details for FLM1314-3F can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FLM1314-3F
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 13.75 to 14.5 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Communication, Wireless Infrastructure
  • Application Type
    X-Band, Ku-Band, Communication
  • Application
    X Band, Ku Band, Communication System
  • Frequency
    13.75 to 14.5 GHz
  • Power
    34 to 35 dBm
  • Power(W)
    2.51 to 3.16 W
  • P1dB
    34 to 35 dBm
  • Power Gain (Gp)
    5 to 5.5 dB
  • Power Added Effeciency
    0.25
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    900 to 1100 mA
  • IMD
    -45 to -42 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    5 to 6 Degree C/W
  • Package Type
    Flanged
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Saturated Drain Current : 1400 to 2100 mA, Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : ±0.6 dB, Channel Temperature Rise : 66 Degree C, Channel Temperature : 175 Degree C

Technical Documents
View details on the manufacturer's website
View similar products