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SGK5867-30A

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The SGK5867-30A from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 5.85 to 6.75 GHz, Power 44 to 45 dBm, Power(W) 25.12 to 31.62 W, Gain 12.5 to 13.5 dB, Power Added Effeciency 0.45. Tags: Flanged. More details for SGK5867-30A can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGK5867-30A
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 5.85 to 6.75 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    SATCOM, Communication, Wireless Infrastructure, Broadcast
  • Application Type
    C-Band, Communication, Radio
  • Application
    C Band, Radio, Satellite
  • CW/Pulse
    CW
  • Frequency
    5.85 to 6.75 GHz
  • Power
    44 to 45 dBm
  • Power(W)
    25.12 to 31.62 W
  • Gain
    12.5 to 13.5 dB
  • Power Added Effeciency
    0.45
  • Transconductance
    3 S
  • Supply Voltage
    24 V
  • Voltage - Drain-Source (Vdss)
    24 V
  • Voltage - Gate-Source (Vgs)
    -10 V
  • Drain Current
    2.7 to 4 A
  • Power Dissipation (Pdiss)
    86.5 W
  • IMD
    -45 to -40 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    2.2 to 2.6 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Saturated Drain Current : 6.5 A, Forward Gate Current : 6.1 mA, Reverse Gate Current : -3.2 mA

Technical Documents
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