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SGK7185-20A

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The SGK7185-20A from Sumitomo is a GaN-HEMT that operates from 7.1 to 8.5GHz. It delivers an output power of 43 dBm with a gain of over 11 dB and has a power-added efficiency of 39%. This high-power transistor is internally matched for C and X-bands applications. It is available in a SMT plastic package and is ideal for radio link and SATCOM applications.

Product Specifications

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Product Details

  • Part Number
    SGK7185-20A
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 7.1 to 8.5 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    SATCOM, Communication, Wireless Infrastructure, Broadcast
  • Application Type
    C-Band, X-Band, Communications, Radio, SATCOM
  • Application
    X Band, Radio, C Band, Satellite
  • CW/Pulse
    CW
  • Frequency
    7.1 to 8.5 GHz
  • Power
    41.5 to 43 dBm (P5dB)
  • Power(W)
    14.13 to 19.95 W (P5dB)
  • Gain
    10 to 12 dB
  • Power Added Effeciency
    39 %
  • Transconductance
    1.8 S
  • Supply Voltage
    24 V
  • Input Power
    39 dBm
  • Voltage - Gate-Source (Vgs)
    -10 V
  • Drain Current
    1.7 to 2.6 A
  • Power Dissipation (Pdiss)
    48 W
  • IMD
    -43 to -40 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    2.7 to 3.4 Degree C/W
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Storage Temperature
    -40 to 125 Degree C
  • Note
    Saturated Drain Current : 3.9 A, Gain Flatness : 1.6 dB, Forward Gate Current : 4 mA, Reverse Gate Current : -1.9 mA

Technical Documents
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