1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Sumitomo Electric Device Innovations
  6. SGN27C160I2D

SGN27C160I2D

Download Datasheet
Request Quote

Note : Your request will be directed to Sumitomo Electric Device Innovations.

SGN27C160I2D Image

The SGN27C160I2D from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.65 GHz, Power 49.5 dBm, Power(W) 89.13 W, Saturated Power 51.7 to 52.5 dBm, Power Gain (Gp) 15.3 to 16.3 dB. Tags: Flanged. More details for SGN27C160I2D can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SGN27C160I2D
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 2.65 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • Application Type
    L-Band
  • Application
    Base Station, 4G / LTE
  • Frequency
    2.65 GHz
  • Power
    49.5 dBm
  • Power(W)
    89.13 W
  • Saturated Power
    51.7 to 52.5 dBm
  • Power Gain (Gp)
    15.3 to 16.3 dB
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Power Dissipation (Pdiss)
    132 W
  • Thermal Resistance
    1.4 to 1.6 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Forward Gate Current : 153 mA, Reverse Gate Current : -5.8 mA

Technical Documents
View details on the manufacturer's website
View similar products