The CHK8013-99F from UMS is a GaN Power Transistor that operates from DC to 10 GHz in pulsed and CW operating modes. It provides 14 Watts of saturated output power with a small signal gain of 17 dB and has a PAE of 70%. This device requires a supply voltage of 30 V. It is manufactured using a 0.25µm gate length GaN HEMT technology on SiC substrate and requires an external matching circuitry. This high electron mobility transistor is available as a chip that measures 0.9 x 1.2 x 0.1 mm and is ideal for a variety of RF power applications such as radars and telecommunications.
