1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. WAVEPIA Co,. Ltd.
  6. WP287P2015MS(S)

WP287P2015MS(S)

RF Transistor by WAVEPIA Co,. Ltd. (86 more products)
Download Datasheet
Request Quote

Note : Your request will be directed to WAVEPIA Co,. Ltd..

WP287P2015MS(S) Image

The WP287P2015MS(S) from WAVEPIA Co,. Ltd. is a RF Transistor with Frequency 6.95 to 7.45 GHz, Power 42.7 dBm, Power(W) 18.62 W, Saturated Power 18.8 W, Duty_Cycle 10%. Tags: Flanged. More details for WP287P2015MS(S) can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    WP287P2015MS(S)
  • Manufacturer
    WAVEPIA Co,. Ltd.
  • Description
    18.8 W, GaN HEMT Transistor from 6.95 to 7.45 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    SATCOM, Test & Measurement, Radar
  • CW/Pulse
    CW, Pulse
  • Frequency
    6.95 to 7.45 GHz
  • Power
    42.7 dBm
  • Power(W)
    18.62 W
  • Saturated Power
    18.8 W
  • Pulsed Width
    0.1 mS
  • Duty_Cycle
    10%
  • Small Signal Gain
    13.17 dB
  • Power Gain (Gp)
    9 dB
  • Power Added Effeciency
    57.80%
  • Supply Voltage
    28 V
  • Threshold Voltage
    -3 V (Gate)
  • Breakdown Voltage
    160 V
  • Voltage - Drain-Source (Vdss)
    160 V
  • Voltage - Gate-Source (Vgs)
    -10 to 2 V
  • Drain Efficiency
    57.80%
  • Drain Current
    1000 mA (Saturated)
  • Quiescent Drain Current
    150 mA
  • Package Type
    Flanged
  • Package
    680B
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Gate Quiescent Voltage : 2.3 V

Technical Documents
View details on the manufacturer's website
View similar products