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WG011012150S

RF Transistor by WAVICE (32 more products)
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The WG011012150S from WAVICE is a RF Transistor with Frequency 1.1 to 1.2 GHz, Power 51.76 dBm, Power(W) 149.97 W, Saturated Power 150 W, Power Gain (Gp) 14 dB. Tags: Flanged. More details for WG011012150S can be seen below.

Product Specifications

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Product Details

  • Part Number
    WG011012150S
  • Manufacturer
    WAVICE
  • Description
    150 W, GaN on SiC Power Transistor from 1.1 to 1.2 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Wireless Infrastructure
  • Application Type
    Radar System
  • Application
    Radar
  • CW/Pulse
    CW
  • Frequency
    1.1 to 1.2 GHz
  • Power
    51.76 dBm
  • Power(W)
    149.97 W
  • Saturated Power
    150 W
  • Power Gain (Gp)
    14 dB
  • Power Added Effeciency
    68%
  • Supply Voltage
    42 V
  • Package Type
    Flanged
  • Grade
    Commercial
View details on the manufacturer's website
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