New RF & Microwave Products at IMS 2015
20 May, 2015 - everything RF NewsletterSponsored by Aeroflex / Inmet | | | | | |
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New Products Released at IMS 2015 |
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Sponsored by Aeroflex / Inmet | | | | | |
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| 1 MHz to 2.7 GHz, 125 Watt GaN Amplifier in Plastic Package | RF Transistor from Freescale | The MMRF5015N is a GaN transistor that operates up to 2700 MHz with an output power of 125 W. This wideband rugged transistor includes input matching for extended bandwidth performance. It has a high gain and is ideally suited for CW, pulse and wideband RF applications. The transistor is available in a plastic package has improved thermals enabling this part to be pushed for higher power or cooled for higher MTTF as opposed to ceramic packaging. | | Download Datasheet | Product Details |
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| X-Band GaN Pulsed Power Amplifier | RF Amplifier from Diamond Microwave | The DM-X100-01 GaN pulsed power amplifier operate in the X-Band from 7.65 GHz to 9.35 GHz. The amplifiers have a peak output power of 120 Watts, duty cycle of 30%, pulse width of 100 us with a rise/fall time of 50 ns. The amplifiers have a PAE of 25% and require a 40 V power supply. The designs are flexible in layout and architecture, and can be tailored to meet individual specifications. | | Download Datasheet | Product Details |
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| DIN 1.0/2.3 Connector and Backplane System | RF Connector from MOLEX | The DIN 1.0/2.3 Modular Backplane System from MOLEX operate from DC to 10 GHz. This backplane design uses a bracket-housing concept that can be expanded to accommodate up to 10 RF ports. This allows PCB developers for video, commercial broadcast, and telecommunications the ability to transfer multiple RF signals across mated boards with a 1.00 mm axial positioning tolerance. | | Download Datasheet | Product Details |
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