1. everything RF
  2. RF Newsletters
more
PREV 28 December, 2015 NEXT

Mergers & Acquisitions in the RF Industry

28 Dec, 2015 - everything RF Newsletter
 
everything RF
Date: 28 Dec, 2015
 
Happy Holidays!
 
 
 
Mergers & Acquisitions in 2015
NXP Spins-off RF Power Business - Calls it Ampleon - Ampleon
API Technologies to Acquire Aeroflex Inmet and Aeroflex Weinschel - API Technologies
Avago Technologies to Acquire Broadcom for $37 Billion - Avago Technologies
Wolfspeed is the New Name for CREEs RF Division - Wolfspeed
Keysight to Acquire Anite for $606 Million - Keysight
Silicon Labs Acquires Bluegiga to Become a Dominant Player in IoT - Silicon Laboratories
Maury Microwave Acquires Anteverta-MW - Maury Microwave
NI Strengthens Global Leadership in 5G Wireless with BEEcube Acquisition - National Instruments
NI Acquires Micropross for $108 Million to Strengthen its Wireless Test Platform - National Instruments
Cree Acquires APEI - Cree
AAC Technologies Acquires WiSpry - AAC Technologies
Focus Microwave Acquires AURIGA’s Pulsed IV and Bias Tee Lines - Focus Microwave
PMC-Sierra Acquired by Microsemi for $2.5 Billion - Microsemi
Amphenol Connex Merged in to Amphenol RF - Amphenol RF
Focus Microwaves Acquires UK based Device Modeling & Characterization Company - Focus Microwaves
More News
Popular White Papers in 2015
Introduction to LTE Device Testing - From Theory To Transmitter and Receiver Measurements - National Instruments
Short Range Low Power Wireless Devices and Internet of Things (IoT) - u-blox AG
Principles of Power Measurement - Boonton
Measuring and Monitoring Satellite Signals - Narda Safety Test Solutions
The Human Body and Millimeter Wave Wireless Communication Systems - NYU WIRELESS
More White Papers
Featured White Paper
Featured White Paper
U.S. Guide to Radio-Frequency (RF) Equipment Regulation
RF equipment manufacturers are the vanguard of the Internet of Things (IoT). By producing innovative wireless modules and other necessary ICT products, manufacturers are ensuring the exponential growth of the IoT. It is estimated that within four short years, by 2020, more than 50 billion connected devices will be part of the IoT. Download this White Paper
 
 
 
Top Transistors of 2015
RF Transistor
L-Band RF Power LDMOS Transistor

RF Transistor from Integra Technologies, Inc.

The ILD1214EL200 from Integra Technologies is a high power pulsed LDMOS transistor that operates from 1.215 GHz to 1.400 GHz. It provides peak pulse power of 200 W with 75% drain efficiency and up to 12.60 dB of gain. The transistor requires 30 V while drawing 15 A of current.
 
Download Datasheet | Product Details
 
RF Transistor
2700 MHz to 3100 MHz, GaN HEMT for S-Band Radar Systems

RF Transistor from Wolfspeed

The CGHV31500F from Cree is a GaN HEMT that operates from 2700 MHz to 3100 MHz. It provides a saturated output power up to 600 Watts, has a power gain of 12.75 dB and efficiency of up to 60%. The transistor is available in a ceramic/metal flange package and is ideal for S-Band Radar Applications.
 
Download Datasheet | Product Details
 
RF Transistor
3.5 GHz to 3.8 GHz GaN HEMT Transistor for 4G/LTE Base Station Transceivers

RF Transistor from Mitsubishi Electric US, Inc.

The MGFS39G38L2 from Mitsubishi Electronics is a GaN-HEMT transistor that has been developed for use in 4G/LTE Base Station Transceivers from 3.5 GHz to 3.8 GHz. This GaN-HEMT provides up to 39 dBm of saturated power with a gain of 19 dB and drain efficiency of 67 %. It requires a supply of 50 V and is available in a compact package.
 
Product Details
 
RF Transistor
5 Watt GaN HEMT from DC to 12 GHz

RF Transistor from Qorvo

The TGF2977-SM from Qorvo is a GaN on SiC HEMT transistor that operates from DC to 12 GHz. It provides up to 6 W of power with a linear gain of 13 dB and efficiency of 50%. The HEMT power transistor requires a 32 V supply for operation and draws 25 mA of current.
 
Download Datasheet | Product Details
 
RF Transistor
High Power 600 Watt LDMOS Transistor in a Plastic Package

RF Transistor from Freescale

The MRFE6VP6600N from Freescale is a 1.8 MHz to 600 MHz LMDOS transistor housed in a plastic package. It delivers up to 600 W of CW power with an efficiency of 74.6% and has a gain of 22.9 dB. It provides a 30 percent reduction in thermal resistance compared to ceramic-packaged transistors.
 
Product Details
 
RF Transistor
2450 MHz, 250 W CW, 32 V RF Power LDMOS Transistor

RF Transistor from Freescale

The MHT1003N is a 2450 MHz high power RF transistor from Freescale that has been developed for RF heating products. It has a 250 watt output with 58% power added efficiency and a gain of 15 dB. The transistor requires a 32 V supply and is available in a flanged plastic package.
 
Download Datasheet | Product Details
 
RF Transistor
DC to 2.7 GHz GaN on Si Wideband Transistor

RF Transistor from MACOM

The NPT2024 is a wideband transistor that operates from DC to 2.7 GHz. It is the first transistor that has been developed on MACOM's 4th generation GaN on Silicon (GaN on Si) process. This process provides performance that rivals expensive GaN on Silicon Carbide (GaN on SiC) at a projected volume production cost structure below that of incumbent LDMOS technology.
 
Download Datasheet | Product Details
 
RF Transistor
200 Watt RF Power Transistor from 1030 MHz to 1090 MHz

RF Transistor from Infineon Technologies

The PTVA102001EA from Infineon Technologies is a UHF and L-Band LDMOS Transistor that operates from 1030 to 1090 MHz. It provides a gain of 18 dB, P1dB of 200 W and an efficiency of 57 %. It requires a supply of 50 V. The transistor is available in an H-36265-2 package type.
 
Download Datasheet | Product Details
 
RF Transistor
960 to 1215 MHz, GaN on SiC HEMT Pulsed Power Transistor

RF Transistor from MACOM

The MAGX-000912-650L0 from MACOM is a GaN on SiC HEMT pulsed power transistor that operates from 960 to 1215 MHz. It provides peak power of up to 650 Watts, with a gain of 21 dB and drain efficiency of 62 %. The transistor has a pulse of 128 µs, duty of 10 % and requires a supply of +65 V (at 33 A current) .
 
Download Datasheet | Product Details
 
RF Transistor
110 Watt Rugged LDMOS Power Transistor up to 600 MHz

RF Transistor from NXP Semiconductors

The BLP05H6110XR from NXP Semiconductors is a LDMOS power transistor that operates from 3 MHz (HF) to 600 MHz. This transistor provides an output of 110 Watts with a gain of 27 dB and an efficiency of 75 %. It requires a 50 V supply and is ideal for broadcast and industrial applications.
 
Download Datasheet | Product Details
 
RF Transistor
NPN Planar Transistor for HF Communications

RF Transistor from Microsemi

The MS1051 from Microsemi is a Class C epitaxial silicon NPN planar transistor that operates from 1 MHz to 30 MHz. It has a gain of 12 dB, an IMD of -30 dBc and provides an output power of 100 W. This transistor utilizes state-of-the-art diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions.
 
Download Datasheet | Product Details
 
RF Transistor
Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package

RF Transistor from Avago Technologies

The ATF-35143 from Avago Technologies is a low noise psuedomorphic HEMT for use in 1.9 GHz systems. It is ideal for Wireless LAN, WLL/RLL, MMDS applications and the first stage of base station LNA due to the excellent combination of low noise figure and high linearity.
 
Download Datasheet | Product Details
 
About everything RF
everything RF is a product discovery platform for RF & Microwave products/Services. We list over 100,000 Products from more than 200 Companies across 200 Categories in our database and enable engineers to search for them using our customized parametric search tool.