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New RF & Microwave Products this Week

2 March, 2016 - everything RF Newsletter
 
everything RF
Date: 2 March, 2016
 
Sponsored by Inmet (API Technologies)
 
 
 
New RF & Microwave Products this Week
RF Mixer
UltraCMOS RF Mixer for Radio and Cellular Infra Applications

RF Mixer from Peregrine Semiconductor

The UltraCMOS PE4152 mixer operates from 100 to 1000 MHz (RF) and 200 to 900 MHz (LO). It delivers excellent linearity, high isolation and low conversion loss in both LO enable and LO bypass modes. It is ideal for land-mobile-radio (LMR), tactical radio and cellular infrastructure applications.
 
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RF Amplifier
9 kHz to 6 GHz High Power RF Amplifiers

RF Amplifier from Rohde & Schwarz

The R&S BBA150 is a new family of broadband amplifiers that operate from 9 kHz to 6 GHz. They provide an output power from 15 to 3000 W based on the selected configuration and have a gain of over 45 dB. The amplifiers are available in both Single Band and Double Band configurations.
 
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Omni-Directional Antenna
Ultra Low Profile Antenna for 3G, LTE and MIMO

Omni-Directional Antenna from Antenova

The SR4C005 (Similis) from Antenova is a surface mount antenna that has been developed for 3G, LTE and MIMO applications. It measures just 40 x 10 x 1.6 mm, making it ideal for M2M and IoT applications where space is always an issue. The antenna has a wide bandwidth from 824 to 1690 MHz under which it covers multiple bands - GSM 850, GSM 900, DCS 1800, PCS 1900, WCDMA 2100, LTE B7 (2500 - 2690 MHz,) LTE B40 (2300 - 2400 MHz).
 
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RF Amplifier
Miniature Drop-In Amplifier from 8 to 12 GHz

RF Amplifier from AtlanTecRF

The AGM-1005-15 is a military certified amplifier that operates from 8 to 12 GHz. The amplifier provides a gain of 10 dB, P1dB of 18.5 dBm and has a noise figure under 5 dB. It requires a 15 V supply and consumes 100 mA of current. This miniature Amplifier has an area similar to that of a postage stamp and is supplied with SMA female connectors for testing. These connectors can be removed to allow the unit to drop directly into MIC substrates in systems, both military and commercial, where high reliability is a must.
 
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Transceiver
Compact, Low Power Transceiver for Wireless-Sensor Applications

Transceiver from Microsemi

The ZL70550 from Microsemi is an ultra-low power transceiver that operates from 779 MHz to 965 MHz. It is well-suited for wireless applications operating on coin-cell batteries or energy harvesters, such as electronic shelf labels, retail asset tracking, process control, wearable monitoring, medical diagnostics and ECG equipment.
 
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Sponsored by Inmet (API Technologies)
Variable Attenuators - Inmet
Meet the New Magic Number for 2 Watt Temperature Variable Attenuators
Push the limits of frequency without sacrificing performance. Aeroflex/Inmet’s new DC to 12 GHz Powerfilm surface mount attenuators vary with temperature and are the perfect balance of price, power, and dependability. To learn more, download the data sheet.
 
 
 
RF Amplifier
0.1 to 6 GHz GaN Amplifiers for Harsh Airborne and Land Environments

RF Amplifier from Teledyne Microwave Solutions

The TMS Family of GaN-based amplifiers from Teledyne Microwave operate from 0.1 GHz to 6 GHz. These amplifiers have wide bandwidths which provide design flexibility and deliver high reliability and performance in harsh airborne and land-based environments. They provide an output power up to 40 W and include preamp and driver stages to produce a minimum overall gain of 50 dB.
 
Download Datasheet | Product Details
 
GPS/GNSS Module
GNSS Module with Onboard 3D Gyro/Accelerometer

GPS/GNSS Module from u-blox AG

The NEO-M8U is the industry’s first Untethered 3D Dead Reckoning module. It combines multi-GNSS (GPS, GLONASS, BeiDou, Galileo) with an onboard 3D gyro/accelerometer, to provide accurate positioning even where GNSS signals are weak or not available. It achieves this without any connection to the vehicle other than power.
 
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Modulator
SPST PIN Diode Pulse Modulator

Modulator from G.T. Microwave, Inc.

The S1P-69-3JH from G.T Microwave is a SPST PIN Diode Pulse Modulator that operates from 2 GHz to 18 GHz. It has an isolation of 80 dB, an insertion loss of less than 3 dB and harmonics of -60 dBc. This pulse modulator can handle up to 27 dBm (1 W) of CW power and has a TTL compatible logic with a switching speed of less than 30 nSec.
 
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Wireless Charging Solution
15 Watt, Wireless Charging Transmitter ICs

Wireless Charging Solution from NXP Semiconductors

The MWCT1x1x from NXP Semiconductors is a range of single-coil wireless charging transmitter ICs with a 15Watt transmission capability. These ICs implement and control the power transfer efficiency which exceeds 75% as well as monitor and manage overall system state, such as foreign object detection, temperature, and system efficiency. All IC solutions are fully compliant with the latest Wireless Power Consortium (WPC) Qi specification.
 
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Front End Module
LTE Dual-Band Front-End Module for IoT

Front End Module from Skyworks

The SKY68000 from Skyworks is a hybrid, dual-band multi-chip RF front-end (RFFE) module that supports cellular LTE Cat-0/Cat-M transceiver platforms. This module integrates the entire RF front end necessary for an LTE dual-band radio that operates in Band 13 and Band 4 including Rx SAW filters, dual-band PA with bias controller, Tx low-pass harmonic filter, antenna switch and MIPI RFFE controller.
 
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RF Switch
SP3T Pin Diode Switch from 600 MHz to 6 GHz

RF Switch from Planar Monolithics Industries

The PMSN-3DT-05-DEC-MP-OPT600M6G from PMI RF is an SP3T absorptive PIN diode switch that operates from 600 MHz to 6 GHz. It has a high isolation of over 60 dB and a low insertion loss under 2.75 dB through the band. The switch can handle up to 20 dBm of CW power and has a VSWR of 2.0:1. It has a rise/fall time of 15 ns.
 
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RF Switch
Active Antenna RF Switch for LTE Smart Phones

RF Switch from Ethertronics

The EC646 from Ethertronics based on Ether Switch&Tune™ technology is a high performance SP4T switch that operates from 100 MHz to 3 GHz. It provides exceptional linearity that is required by LTE/WCDMA/GSM and WiFi applications. The switch allows the RF front end to cover global bands and seamlessly improve performance in a dynamically changing RF environment by using active tuning.
 
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RF Amplifier
2 Watt, Power Amplifier for Cellular Infrastructure

RF Amplifier from NXP Semiconductors

The MMZ25332B4 from NXP Semiconductor is a 2-stage power amplifier that operates from 1500 MHz to 2700 MHz.It is targeted at driver and pre-driver applications for macro/micro base stations and final stage applications for small cells. The amplifier provides a gain of 26.5 dB, a P1dB of 33 dBm and an OIP3 of 48 dBm at 2500 MHz.
 
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RF Amplifier
2 GHz to 6 GHz Driver Amplifier Die

RF Amplifier from Custom MMIC

The CMD231 is a wideband MMIC driver amplifier that operates from 2 GHz to 6 GHz. It provides a gain of 14.5 dB with a corresponding output P1dB of 13.5 dBm and an output IP3 of 23.5 dBm. The device is available in a small die size and requires a single positive supply of 5V. The CMD231 is ideally suited for military, space and communications systems where small size and high linearity are needed.
 
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