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News & Products from IMS 2017

5 June, 2017 - everything RF Newsletter
 
everything RF
Date: 5 June, 2017
 
 
 
The International Microwave Symposium (IMS 2017) is taking place in Hawaii this year. This newsletter provides pre-show coverage, telling you about the latest news and products at IMS 2017.
 
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Latest News from IMS 2017
IMS 2017 Aims to Make 5G and Internet of Things a Universal Reality - MTT
R&S Unveils the Most Powerful Analog Signal Generator up to 20 GHz - Rohde & Schwarz
Anritsu to Showcase its Nonlinear Transmission Line Technology at IMS 2017 - Anritsu
Anokiwave to Showcase its Latest Revolutionary Products for 5G, RADAR, and SATCOM at IMS2017 - Anokiwave
Qorvo Drives Deployment of 5G Networks with 28 GHz mmWave Solutions - Qorvo
New ADC & PLL Enable Wide Bandwidths and Low Phase Noise for Next-Generation High-Speed Systems - Texas Instruments
World's First Wireless Ultra-Narrow Band Transceiver for IoT Applications - Leti
High Efficiency LDMOS Power Transistors for Wireless Infrastructure PAs - Ampleon
World's First Ultra-Fast GaN Envelope-Tracking PA for Next-Gen Wireless Base Stations - Mitsubishi
Empower RF to Demonstrate Remotely Controlled 1000 Watt Amplifier at IMS 2017 - Empower RF
Akoustis Demonstrates First 5.8 GHz Single-Crystal Resonators for BAW RF Filters - Akoustis Technologies
MACOM to Feature its RF and Microwave Portfolio at IMS 2017 - MACOM
A/D Converter based on 28nm Process meets Spectral Efficiency Demands of 4G/5G Base Stations - Analog Devices
NI to Showcase Updated AWR Design Environment at IMS 2017 - National Instruments
Skyworks to Display a Wide Range of RF Solutions at IMS 2017 - Skyworks
A List of Contests & Prizes you can Win at IMS 2017 - everything RF
More News
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IMS 2017

Date: 4 to 9 June, 2017

Location: Honolulu, Hawai'i

 
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Products to See at IMS 2017
Signal Generator
High Performance Analog Signal Generator up to 20 GHz

Signal Generator from Rohde & Schwarz

The R&S SMA100B from Rohde & Schwarz is a powerful analog signal generator with a frequency range up to 20 GHz. It can generate signals with the a very low phase noise and low harmonics while delivering a high output power. The device can provide high-level signals with extremely low, close-in phase noise of less than -152 dBc at 1 GHz and less than -132 dBc at 10 GHz, each at 20 kHz offset.
 
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RF Variable Attenuator
Millimeter Wave Attenuation Systems for 5G Development and Testing

RF Variable Attenuator from JFW Industries

The 50BA-025-62 from JFW Industries is a compact benchtop programmable attenuator assembly that operates from 100 MHz to 40 GHz. It has specifically been developed for testing mm-wave and 5G radios in a laboratory environment. It has an attenuation range from 0 to 62 dB with 1 dB steps. The assembly can handle an input power of up to 25 dBm and has switching speed of 1 microsecond.
 
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Digital Phase Shifter
29 to 31 GHz Phase Shifter with Integrated SPDT Switch

Digital Phase Shifter from Qorvo

The QPC1000 from Qorvo is a 5-bit digital phase shifter with an integrated SPDT switch that operates from 29 to 31 GHz. It supports 360° of phase coverage over the complete frequency range, with a RMS phase error of 5° and an insertion loss of 9 dB.
 
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RF Amplifier
60 W Solid-State Amplifier from 0.7 to 6 GHz

RF Amplifier from AR RF/Microwave Instrumentation

The 60S1G6 from AR RF/Microwave Instrumentation is a portable, self-contained, air-cooled, solid-state microwave amplifier that operates from 0.7 to 6 GHz. It delivers over 60 watts of CW output power and has a gain of more than 48 dB with a noise figure of 10 dB. The low level of spurious signals and linearity make it ideal for use as a driver amplifier in testing wireless and communication components and subsystems.
 
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RF Switch
SPDT Pin Switch from 8 to 12 GHz

RF Switch from Planar Monolithics Industries

The PDT-8G12G-40-515-SFF from PMI RF is a SPDT pin switch that operates from 8 to 12 GHz. It has a high isolation of over 40 dB and a low insertion loss under 2 dB through the band. The switch can handle up to 40 dBm of power and has a VSWR of 1.8:1. It has a switching speed of under 200 ns. This SPDT switch requires +5/-15 V supply voltage and is available in a module with connectors.
 
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Laminate
High Performance Laminate, Dielectric Matched to FR-4

Laminate from Rogers Corporation

The Kappa 438 Laminates from Rogers have been specifically formulated to have FR-4 matched dielectric constant (Dk). These laminates also exhibit low loss, tight Dk and thickness tolerances needed to meet the growing performance needs of the wireless market traditionally served by higher end FR-4 materials.
 
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Horn Antenna
18 to 40 GHz Dual-Ridged Horn Antenna for 5G Applications

Horn Antenna from SAGE Millimeter

The SAR-1834031432-KF-S1-DR from SAGE Millimeter is a dual-ridged horn antenna that operates from 18 to 40 GHz. The antenna offers a nominal gain between 12 and 17 dBi and a typical 3 dB beamwidth between 20° and 43°.
 
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RF Spectrum Analyzer
Real-Time Spectrum Analyzer and RF Recorder from 9 kHz to 6 GHz

RF Spectrum Analyzer from Signal Hound

The BB60C is a Real-Time Spectrum Analyzer and RF Recorder that operates from 9 kHz to 6 GHz. It has a realtime bandwidth of 27 MHz and a resolution bandwidth of up to 10 MHz. The Signal Hound BB60C is ideal for real-time spectrum monitoring, manufacturing process control, interference hunting, spread spectrum signal analysis, capturing intermittent events, and general purpose spectrum analysis.
 
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Power Sensor
1 MHz to 40 GHz True RMS Power Sensor

Power Sensor from LadyBug Technologies

The LB5940A is a high accuracy, platform independent RF Power Sensor that operates up to 40 GHz. This general purpose power meter can measure average power, True RMS and do scalar measurements. It has a fast measurement speed, a broad dynamic range and a wide set of options for programmatic and embedded applications. The sensor is useful in research & development, manufacturing & service applications including radar, satellite and telecommunications.
 
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RF Amplifier
GPS/GLONASS/Galileo/Compass Low-Noise Amplifier

RF Amplifier from Skyworks

The SKY65623-682LF from Skyworks is a MMIC front-end low-noise amplifier designed for Global Navigation Satellite System (GNSS) radio receiver applications. It delivers a gain of 16.5 dB with an IIP3 of -11.5 dBm and has a noise figure of 0.85 dB while operating from 1559 to 1606 MHz. The device requires a supply voltage of 1.5 to 3.6 volts while consuming only 1 mA of current and has a low shutdown current of 0.1 µA.
 
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RF Transceiver
Single-Chip SiGe Transceiver Chipset for E-band Backhaul Applications from 71 to 76 GHz

RF Transceiver from Infineon Technologies

The BGT70 is a single chip SiGe Transceiver Chipset from Infineon that operates from 71 to 76 GHz. They have been developed for E-Band backhaul applications. The chip consists of a power amplifier, Low Noise Amplifier, Up- and Down-Convertor, Programmable Gain Amplifier (PGA), Voltage Controlled Oscillator components all on one SiGe chip.
 
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Vector Network Analyzer
900 Hz to 120 GHz PNA MM-Wave VNA

Vector Network Analyzer from Keysight Technologies

The N5291A PNA millimeter-wave network analyzer solution from Keysight operates from 900 Hz to 120 GHz. It produces metrology-grade results that enable developers to characterize their millimeter-wave designs. The new solution enhances device characterization and modeling by delivering exceptional stability and accuracy for on-wafer and connectorized measurements. Magnitude stability is less than 0.015 dB and phase accuracy is less than 0.15 degrees over a 24-hour period.
 
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Waveguide Circulator
200 W Waveguide Circulators from 18 to 110 GHz

Waveguide Circulator from Millitech

The Series HPC from Millitech are waveguide circulators that operate from 18 to 110 GHz. The circulators have a high isolation of 18 dB and low insertion loss of less than 2 dB. They can handle a power of up to 200 watts and has a low VSWR of 1.3:1. These devices are ideal for TWT protection, duplexer in transceivers, assemblies and subsystems. They are available with WR-10, WR-12, WR-15, WR-19, WR-22, WR-28 and WR42 waveguide options.
 
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Directional Coupler
1 to 65 GHz Directional Coupler

Directional Coupler from KRYTAR

The 101065013 from Krytar is a 13 dB Directional coupler that operates from 1 to 65 GHz. The coupler has a directivity of over 15 dB, an insertion loss of less than 3.5 dB and a maximum VSWR of 1.9:1. It can handle up to 20 watts of average power and 3 KW of peak power. The coupler is available with 1.85 mm connectors.
 
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RF Transistor
50 W RF Power GaN Transistor from 2496 to 2690 MHz

RF Transistor from NXP Semiconductors

The A2G26H281-04S from NXP Semiconductors is asymmetrical Doherty RF power GaN transistor that operates from 2496 to 2690 MHz. It delivers an output power of 50 Watts with a gain of 15.3 dB and drain efficiency of 57%. This transistor requires a supply voltage of 48 Volts DC and consumes 150 mA of current. It is available in a NI-780S-4L package.
 
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