New RF & Microwave Products this Week
14 Feb, 2018 - everything RF NewsletterRF & Microwave industry updates. View it in your browser
| RF Energy Transistors | | | A List of All RF Energy Transistors | | | everything RF has compiled the most comprehensive list of transistors that can be used for RF Energy Applications. RF Energy technology is now being adopted in a number of industrial and cooking applications. Solid State Transistors are much more efficient than magnetrons that are currently used in microwaves for cooking. Click here to see RF Energy Transistors. |
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| New RF & Microwave Products this Week |
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| | 250 W GaN HEMT Transistor from DC to 2 GHz | RF Transistor from Wolfspeed, A Cree Company | | The CGHV40180 from Wolfspeed is a GaN High Electron Mobility Transistor that operates from DC to 2 GHz. It provides an output power of 250 W and a gain of 24 dB while operating from a 28 V or 50 V supply. This transistor has been created for the growing ultra-high frequency (UHF) radar market, in which defense, public safety and land mobile radio applications seek to upgrade performance and component lifecycle availability by implementing GaN RF power devices. | | | | Download Datasheet | Product Details |
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| | 700 MHz to 6 GHz Low Noise Driver Amplifier | RF Amplifier from Guerrilla RF | | The GRF5511 is a low noise amplifier/linear driver that operates from 700 MHz to 6 GHz. At 2500 MHz, it provides a gain of 20.1 dB with a noise figure of 1.5 dB. The LNA delivers a P1dB of 26.1 dBm, OIP3 of 39.6 dBm while operating at 5.0 volts and consuming 130 mA of current. It is available in a surface mount package and is ideal for microwave backhauls, 802.11 ac applications and general driver applications for PA's. | | | | Download Datasheet | Product Details |
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| | 4-Stage Power Amplifier from 17.7 to 26.5 GHz | RF Amplifier from MACOM | | The MAAP-118260 from MACOM is a fully four stage power amplifier with integrated, on-chip power and envelope detectors. It operates from 17.7 to 26.5 GHz and provides a gain of 28.5 dB with a P1dB of 28.5 dBm and OIP3 of 37 dBm. This power amplifier is available in a lead free, fully molded 5 mm, 24 lead, QFN package and consists of a four stage power amplifier with integrated, on-chip power and envelope detectors. | | | | Download Datasheet | Product Details |
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| | RF SOI SP8T RF Switch from 10 MHz to 8 GHz | RF Switch from pSemi | | The PE42482 from Peregrine is an UltraCMOS (SOI) SP8T RF switch that operates from 10 MHz to 8 GHz. The switch has an insertion loss of less than 1.6 dB with an isolation of over 30 dB. This absorptive switch can handle an input power of up to 33 dBm and has a switching time of 227 ns. It is available in a 4 x 4 mm, 24 Lead QFN package and is ideal for wireless infrastructure, filter bank switching and RF signal routing applications. | | | | Download Datasheet | Product Details |
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| Upcoming Event | | | See Mobile World Congress Coverage | | | The GSMA Mobile World Congress (MWC 2018) is the leading event for the wireless industry. It consists of a conference featuring visionary keynotes and thought-provoking panel discussions, an exhibition with more than 2,000 companies displaying cutting-edge products and technologies that define the future of mobile and an excellent opportunity for networking in the mobile industry. Click here to learn more. |
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