PREV 14th Feb, 2018 NEXT

New RF & Microwave Products this Week

14 Feb, 2018 - everything RF Newsletter

RF & Microwave industry updates. View it in your browser

 
everything RF
Date: 14 Feb, 2018
 
RF Energy Transistors
RF Energy Transistors
A List of All RF Energy Transistors
everything RF has compiled the most comprehensive list of transistors that can be used for RF Energy Applications. RF Energy technology is now being adopted in a number of industrial and cooking applications. Solid State Transistors are much more efficient than magnetrons that are currently used in microwaves for cooking. Click here to see RF Energy Transistors.
 
 
 
New RF & Microwave Products this Week
Antenna
Ultra-Slim Chip Antenna for 3G, 4G and 5G Applications

Antenna from Fractus Antennas

The FR01-S4-210 (TRIO mXTEND&trade) from Fractus Antennas is a chip antenna that operates in 3 different frequency bands: 698-960 MHz, 1710-2690 MHz and 3400-3800 MHz for 3G, 4G and 5G Applications. It offers the flexibility to be tuned at the frequency regions of interest through the proper adjustment of the matching network.
 
Download Datasheet | Product Details
 
RF Spectrum Analyzer
USB Vector Spectrum Analyzer from 1 MHz to 6.2 GHz

RF Spectrum Analyzer from Triarchy Technologies

The VSA6G2A from Triarchy Technologies is a USB Vector Spectrum Analyzer that operates from 1 MHz to 6.2 GHz. This compact analyzer can be connected to a PC via the USB port and does not require any external power. It can be used to monitor RF signals and is also run EMC tests with a near field antenna. The analyzer is available in a module that measures 115 x 25 x 25 mm.
 
Download Datasheet | Product Details
 
RF Transistor
600 Watt LDMOS Transistor for RF Energy Applications

RF Transistor from Ampleon

The BLF0910H9LS600 from Ampleon is a 600 Watt LDMOS power amplifier transistor for RF energy applications that operates from 900 to 930 MHz. This transistor has been developed on Ampleon&rsquos latest Gen9HV 50 V LDMOS process, a node that has been optimized to deliver greatly increased efficiency, power and gain. It provides a high gain of typically 19.8 dB with an efficiency of typically above 68 %.
 
Download Datasheet | Product Details
 
RF Transistor
250 W GaN HEMT Transistor from DC to 2 GHz

RF Transistor from Wolfspeed, A Cree Company

The CGHV40180 from Wolfspeed is a GaN High Electron Mobility Transistor that operates from DC to 2 GHz. It provides an output power of 250 W and a gain of 24 dB while operating from a 28 V or 50 V supply. This transistor has been created for the growing ultra-high frequency (UHF) radar market, in which defense, public safety and land mobile radio applications seek to upgrade performance and component lifecycle availability by implementing GaN RF power devices.
 
Download Datasheet | Product Details
 
RF Transistor
50 W C-Band GaN Transistor for Radars

RF Transistor from Integra Technologies, Inc.

The IGT5259L50 from Integra Technologies is a fully-matched, GaN-on-SiC HEMT that provides 50 W of peak pulsed output power while operating from 5 to 6 GHz. This transistor provides 14 dB of gain, and 43% efficiency at 1 millisecond/15% pulse conditions.
 
Download Datasheet | Product Details
 
Wireless Charging Solution
Multi-Mode Qi/Airfuel Inductive Wireless Power Receiver

Wireless Charging Solution from STMicroelectronics

The STWLC33 from STMicroelectronics is an integrated wireless power receiver solution suitable for portable applications up to 15 W. It supports the Qi 1.2 and AirFuel inductive communication protocol. This receiver can be switched to transmitter mode to provide power to another receiver. It is available in a Flip Chip 52 bumps package that measures 3.97 x 2.67 mm and is suitable for enabling wireless charging in phones, navigation systems and wearable devices.
 
Download Datasheet | Product Details
 
RF Amplifier
32 to 40 GHz, Solid State High Power Amplifier

RF Amplifier from Exodus Advanced Communications

The AMP4052 is a solid state GaAs power amplifier that operates from 32 to 42 GHz. It provides an output power of more than 10 watts with a gain of over 40 dB. This rack mount amplifier can be controlled via the front panel on the amplifier system. It is available in a rack mount unit that measures 430 x 112 x 560 mm with 2.9 mm female connectors and weighs 11 kg.
 
Download Datasheet | Product Details
 
RF Amplifier
700 MHz to 6 GHz Low Noise Driver Amplifier

RF Amplifier from Guerrilla RF

The GRF5511 is a low noise amplifier/linear driver that operates from 700 MHz to 6 GHz. At 2500 MHz, it provides a gain of 20.1 dB with a noise figure of 1.5 dB. The LNA delivers a P1dB of 26.1 dBm, OIP3 of 39.6 dBm while operating at 5.0 volts and consuming 130 mA of current. It is available in a surface mount package and is ideal for microwave backhauls, 802.11 ac applications and general driver applications for PA's.
 
Download Datasheet | Product Details
 
RF Cable Assembly
Low Loss Armored Test Cables for Compliance Measurements

RF Cable Assembly from MegaPhase

The EMC Series from MegaPhase are low loss armored cables that operate up to 40 GHz. These low density, ultra-rugged cables are constructed using materials that meet high electromagnetic compatibility standards. The cable assemblies provide excellent shielding effectiveness and high crush resistance. They are ideal for testing RF emissions and are available with various connector options.
 
Download Datasheet | Product Details
 
RF Amplifier
High Power Ka-band Amplifier with 33 dBm output power

RF Amplifier from ERZIA

The ERZ-HPA-2600-4000-33 is a High Power Amplifier that operates from 26 to 40 GHz. This Ka-band amplifier provides an output power of 33 dBm with a gain on 35 dB. It requires a 12 V supply voltage and draws 2.5 A of current. This PA is available in a compact module that measures 30 x 50 x 17.5 mm. It is ideal for industrial, SATCOM, Telecom, Space and Military applications.
 
Download Datasheet | Product Details
 
RF Amplifier
4-Stage Power Amplifier from 17.7 to 26.5 GHz

RF Amplifier from MACOM

The MAAP-118260 from MACOM is a fully four stage power amplifier with integrated, on-chip power and envelope detectors. It operates from 17.7 to 26.5 GHz and provides a gain of 28.5 dB with a P1dB of 28.5 dBm and OIP3 of 37 dBm. This power amplifier is available in a lead free, fully molded 5 mm, 24 lead, QFN package and consists of a four stage power amplifier with integrated, on-chip power and envelope detectors.
 
Download Datasheet | Product Details
 
RF Variable Attenuator
High Dynamic Range Attenuator from 18 to 40 GHz

RF Variable Attenuator from SAGE Millimeter

The SKA-1834033535-KFKF-A1 from Sage Millimeter is a MMIC attenuator that operates from 18 to 40 GHz. The attenuator provides an attenuation range of up to 35 dB with an insertion loss of 3.5 dB. It can handle up to 30 dBm of input power and has a 0 to -3 VDC control voltage. The attenuator is available in a module that measures 0.8 x 0.8 x 0.39 inches with K(F) connectors at the input and output ports, and SMA(F) connector at the control port.
 
Download Datasheet | Product Details
 
RF Switch
RF SOI SP8T RF Switch from 10 MHz to 8 GHz

RF Switch from pSemi

The PE42482 from Peregrine is an UltraCMOS (SOI) SP8T RF switch that operates from 10 MHz to 8 GHz. The switch has an insertion loss of less than 1.6 dB with an isolation of over 30 dB. This absorptive switch can handle an input power of up to 33 dBm and has a switching time of 227 ns. It is available in a 4 x 4 mm, 24 Lead QFN package and is ideal for wireless infrastructure, filter bank switching and RF signal routing applications.
 
Download Datasheet | Product Details
 
Termination
250 W Chip Terminations from DC to 2 GHz

Termination from API Technologies - Inmet

The PPC375-375AG2 from API Inmet are chip terminations that operate from DC to 2 GHz. They can handle up to 250 Watts of power and have a VSWR of 1.50:1. The chips are fabricated on a Beryllium Oxide Ceramic substrate with a thin film resistor. These terminations are available in standard impedance values of 50 and 100 ohm in a surface mount package.
 
Download Datasheet | Product Details
 
Dual Directional Coupler
300 W Dual-Directional Coupler from 20 to 1000 MHz

Dual Directional Coupler from Mini Circuits

The DDCH-50-13+ from Mini-Circuits is a dual-directional coupler that operates from 20 to 1000 MHz. This coupler has a coupling value of 50 dB, directivity of 24.5 dB, insertion loss of 0.15 dB and a return loss of 30 dB. It can handle up to 300 watts of power. The DDCH-50-13+ is fabricated using a laminated PCB process and includes wrap-around terminations for good solderability and easy visual inspection.
 
Download Datasheet | Product Details
 
Analog to Digital Converter
32-Bit Over-Sampling ADC with Configurable Digital Filter

Analog to Digital Converter from Linear Technology

The LTC2508-32 is a low noise, low power, 32-bit ADC with an integrated configurable digital filter. The digital filter can be easily configured for 4 different down-sampling factors by pin strapping. The configurations provide a dynamic range of 131 dB at 3.9ksps and 145 dB at 61sps. The ADC has a fully differential input range from 2.5V to 5.1V.
 
Download Datasheet | Product Details
 
Upcoming Event
MWC 2018
See Mobile World Congress Coverage
The GSMA Mobile World Congress (MWC 2018) is the leading event for the wireless industry. It consists of a conference featuring visionary keynotes and thought-provoking panel discussions, an exhibition with more than 2,000 companies displaying cutting-edge products and technologies that define the future of mobile and an excellent opportunity for networking in the mobile industry. Click here to learn more.
 
 
 
About everything RF
everything RF keeps users up to date with the RF & Microwave Industry. We provide the latest new, white papers, new product information, upcoming events, interviews and much more.

To unsubscribe please click here[Sender_Name]
[Sender_Address], [Sender_City], [Sender_State], [Sender_Zip]