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New RF & Microwave Products this Week

6 Feb, 2019 - everything RF Newsletter

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everything RF
Date: 6 Feb, 2019
 
Sponsored by Mouser
 
 
 
New RF & Microwave Products this Week
RF Transistor
280 W GaN on SiC HEMT from 3.4 to 3.6 GHz

RF Transistor from Wolfspeed, A Cree Company

The GTRA362802FC-V1 from Wolfspeed is a GaN on SiC HEMT that operates from 3.4 to 3.6 GHz. It provides a peak output power of 280 W (P3dB) and a gain of 13.5 dB while operating from 48 V supply. This pulsed device has a pulse width of 10 µs and duty cycle of 10%. It is available in a thermally-enhanced surface mount package with earless flange and is ideal for multi-standard cellular power amplifier applications.
 
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RF Amplifier
175 W Power Amplifier for RF Cooking Applications

RF Amplifier from NXP Semiconductors

The MHT2001N from NXP is an RF Power Amplifier for Consumer and Commercial Cooking that operates from 902 to 928 MHz. This amplifier provides up to 175 watts of CW power with a gain of 33.8 dB and an efficiency of 72%. It requires a 50 V supply and is internally matched to 50 ohms. The amplifier has been developed using LDMOS transistors, has integrated ESD protection and can operate at temperatures up to 150 degrees C.
 
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RF Switch
SP16T Absorptive Switch from 0.5 to 18 GHz

RF Switch from UMCC

The SR-U010-16S from UMCC is an absorptive SP16T PIN-switch that operates from 0.5 to 18 GHz. It can handle an input power of up to 27 dBm, has an insertion loss of less than 5.7 dB, an isolation of more than 60 dB and switching speed of 80 ns. The switch requires a supply voltage of -12 / +5 V while consuming up to 550 mA of current. It is available in a module with SMA female connectors.
 
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RF Switch
SP8T Pin Diode Absorptive Switch from 2 to 18 GHz

RF Switch from ETL Systems

The SW-SP8TKX-1613 from ETL Systems is an absorptive SP8T PIN-switch that operates from 2 to 18 GHz. It can handle an input power of up to 30 dBm, has an insertion loss of less than 4 dB, an isolation of more than 60 dB and switching speed of 100 ns. The switch requires a supply voltage of -5 / +5 V while consuming up to 350 mA of current. It is available in a module with 50 ohm SMA connectors.
 
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RF Module
Integrated Dual-Band Wi-Fi/Bluetooth Low Energy 5.0 Module

RF Module from Telit Communications

The WL865E4-P is a fully integrated dual band, dual mode, combo Wi-Fi (802.11 a/b/g/n) / Bluetooth Low Energy (BLE) 5.0 module. The module is based on an integrated tri-core system-on-chip, with dedicated CPU’s for IoT application, Wi-Fi and BLE. It has a receiver sensitivity of -96 dBm (with 802.11b). The IoT application processor runs on ARM Cortex-M4F @128 MHz with 300 KB of dedicated SRAM.
 
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RF Module
Bluetooth Low Energy Wireless MCU Module

RF Module from Jorjin Technologies

The ZB7412-00 is a certified 2.4-GHz RF transceiver module targeting Bluetooth 4.2 and Bluetooth 5 low energy applications. Based on TI CC2640R2F wireless MCU, it integrates 24 MHz & 32.768 KHz crystals, DC-DC converter, and a chip antenna into a single module. It has a receiver sensitivity of –97 dBm for BLE and provides an output power of up to 5 dBm, while operating from a 1.8 to 3.8 V supply.
 
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Cellular Module
CAT-1 IoT Chipset with Downlink Speeds of up to 10 Mbps

Cellular Module from Altair Semiconductor

The ALT1160 is an LTE CAT-1 chipset that features downlink speeds of up to 10 Mbps and uplink speeds of up to 5 Mbps with extremely low power consumption. The chipset includes the ALT1160 baseband chip and the ALT6401, an RF-CMOS transceiver IC. This IoT-optimized chipset is highly integrated and incorporates an advanced on-chip power management unit, integrated DDR memory and a low-power application layer.
 
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Sponsored by Mouser
Digi-Cellular Router
Single or Dual LTE Connectivity for Transportation Applications
Digi International Transport WR54 Cellular Router is ruggedized and hardened for temperature, vibration, and dirty environments. The WR54 offers link failover and load balancing across dual 600Mbps CAT11 Cellular. It is future built with a Dualcore 880MHz MIPS processor, and a PCIe 2.0 internal bus. Click here to learn more.
 
 
 
Cellular Module
LTE Cat-M1/Cat-NB1/GPRS LPWA Module

Cellular Module from Fibocom

The M910-GL from Fibocom is a tri-mode IoT module that supports LTE Cat-M1/Cat-NB1/GPRS technologies. It has been developed to operate globally and is a good replacement for 3G/4G modules. This ultra-low power module requires a 3.3 - 4.3 V supply. It can be used in a wide range of applications including smart meters, smart parking, smart home and municipal street lamps.
 
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RF Amplifier
GaN Power Amplifier from 0.1 to 2 GHz

RF Amplifier from SuperApex Corporation

The SAC3125Q6 from SuperApex is a GaN MMIC Power Amplifier that operates from 0.1 to 2 GHz. This amplifier provides a P3dB of 39 dBm with a gain of 15 dB and an efficiency of 45%. It requires a 28 V supply and is available in a plastic SMT package that eliminates the need for wire bonding, and is compatible with high volume surface mount manufacturing techniques.
 
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RF Amplifier
Q-Band Power Amplifier from 33 to 45 GHz

RF Amplifier from ERZIA

The ERZ-HPA-3300-4500-23 from Erzia is a Q-band Power Amplifier that operates from 33 to 45 GHz. It provides a gain of more than 13 dB and an output power of up to 26 dBm. The PA requires a supply of 12 V DC and consumes up to 2.5 W of power. It is available in a gold plated compact aluminium module with 2.4mm female connectors and is ideal for industrial, satcom, space, aerospace and military applications.
 
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RF Amplifier
50 W L-Band Solid State Power Amplifier

RF Amplifier from NuWaves Engineering

The NW-PA-13G05A is a GaN solid state power amplifier that operates from 800 to 2000 MHz. It provides a saturated output power of 35 W, with a gain of 40 dB and efficiency greater than 40%. The Power Amplifier is available in an aluminum chassis which provides improved heat dissipation characteristics for higher-temperature operation.
 
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RF Amplifier
Dual Channel Variable Gain Amplifier from 3.4 to 3.8 GHz

RF Amplifier from Integrated Device Technology

The F0448 from IDT is a dual channel variable gain amplifier that operates from 3.4 to 3.8 GHz. This Dual RF Digital Variable Gain Amplifier provides two independent receiver paths each with up to 13 dB of gain. The gain level of each channel can be regulated based on the users requirement. It requires a 5 V supply and draws 220 mA of current.
 
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Directional Coupler
5G Ready Millimeter-wave Coupler from 26 to 34 GHz

Directional Coupler from MECA

The 765-10-30.000 from MECA is a 5G ready millimeter-wave coupler that operates from 26 to 34 GHz. Available with a coupling value of 10 (20 dB also available), this coupler has an insertion loss of 1.2 dB and directivity of over 13 dB. It can handle an average power of up to 20 watts and has a VSWR of 1.6:1. The 765-10-30.000 is available in a module with 2.92mm female connectors.
 
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Directional Coupler
10 dB Directional Coupler from 0.3 to 8 GHz

Directional Coupler from Werbel Microwave

The WMDC10-0.3-8-S-A3 from Werbel Microwave is a directional coupler that operates from 0.3 to 8 GHz. This 10 dB directional coupler has excellent VSWR, coupling flatness and high directionality. It is available in a module that measures 6.00 x 0.73 x 0.50 inches and may be fitted with an optional low-profile termination. The coupling value can be customized based on a customers requirement.
 
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Sponsored by Mouser
 
 
 
OCXO
Ultra Low Phase Noise Dual Frequency OCXO Reference Module

OCXO from NEL Frequency Controls

This module from NEL Frequency Controls is an Ultra Low Phase Noise Dual Frequency OCXO Reference Module that consists of 2 OCXOs at 10 MHz and 100 MHz. The unit at 100 MHz is phase/frequency locked to the 10 MHz one.
 
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RF Amplifier
2 kW Pulsed Solid State Power Amplifier from 5.4 to 5.9 GHz

RF Amplifier from Exodus Advanced Communications

The AMP4039P-2 is a solid state pulsed power amplifier that operates from 5.4 to 5.9 GHz. The amplifier provides a pulsed output power of over 2 KW @ 10% duty cycle, with a gain of over 67 dB. The unit has excellent gain flatness, fast Rise/Fall times and excellent pulse characteristics. This GaN amplifier is based on a class AB design and is ideal for high power - C-Band pulse applications.
 
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RF Amplifier
Wide Band Front End Amplifier from 1 to 26.5 GHz

RF Amplifier from Planar Monolithics Industries

The PEC-14-127-8-12-SFF Rev B from PMI RF is a wide band front end amplifier that operates from 1 to 26.5 GHz. The amplifier provides a gain of 13 to 17 dB with a flatness of +/- 1.5 dB and a noise figure of under 6 dB. It requires a 12 V supply voltage and draws 225 mA of current. This amplifier is available in a module that measures 0.83 x 0.75 x 0.36 inches with SMA connectors.
 
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RF Shielded Test Enclosure
Shielded Test Enclosure for 5G Applications

RF Shielded Test Enclosure from DVTest

The dbSafe5G is a shielded test enclosure for mmWave applications. It is available in two configurations - one supports frequencies below 33 GHz and and the other supports mm-Wave bands from 30 to 70 GHz. 5G devices will be designed in the mmWave range using massive MIMO capability. The dbSafe5G makes MIMO testing in array configurations possible.
 
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Block Up Converter
6 W Block Up Converter from 7.9 to 8.4 GHz

Block Up Converter from Genmix Technology

The GMU079084B01 is a Block Up Converter which upconverts an input frequency from 950 MHz to 1450 MHz to an RF frequency from 7.9 to 8.4 GHz. The BUC delivers an output power of more than 37.8 dBm with a gain of over 60 dB. It works on a wide range of supply voltages from 18 to 36 V, while consuming up to 45 W of power. The BUC is available in a module that measures 150 x 130 x 55 mm and is ideal for VSAT and Satcom applications.
 
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Frequency Synthesizer
X band Programmable Frequency Synthesizer from 8.4 to 10 GHz

Frequency Synthesizer from AMG Microwave

The AMG039-001 from AMG microwave is a programmable frequency synthesizer that can generate an output frequency from 8.4 to 10 GHz in 125 kHz steps. This frequency synthesizer has a low phase noise of -85 dBc/Hz and an output power of up to 12 dBm. It is available in a module that measures 120 x 85 x 29 mm with SMA female connectors.
 
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RF Variable Attenuator
DC to 40 GHz MMIC Voltage Controlled Attenuator

RF Variable Attenuator from Microsemi

The MMS005AA from Microsemi is a MMIC voltage controlled attenuator that operates from DC to 40 GHz. It has an insertion loss of 3 dB, attenuation of 17 dB and can handle up to 8 dBm of input power (P1dB). The performance of the device is controlled by two bias voltages, Vseries and Vshunt. The bias voltages control the match and attenuation of the device when varied between -1V and +0.5V DC.
 
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Horn Antenna
5 dBi Wide Beam Ku-Band Horn Antenna

Horn Antenna from MTI Wireless Edge

The MT–701004/K from MTI Wireless Edge is a Horn Antenna that operates from 24 to 40 GHz in the Ku-Band. It delivers a gain of more than 5 dBi and can handle an input power of up to 20 dBm (CW), 30 dBm (pulsed) with a 10% duty cycle. The antenna measures 49 x 16 x 16 mm (without flange) and is available with 2.4 mm female connectors.
 
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