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News, White Papers & Popular Transistors

6 October, 2014 - everything RF Newsletter
 
everything RF
Date: 6 October, 2014
 
EuMW 2014 Coverage on everything RF
 
 
 
Industry News
Pulsed RF Power Semiconductor Device Markets to Exceed $300 Million by 2019 - ABI Research
Anritsu Introduces Field Analyzer with Integrated PIM and Line Sweep Testing Capability - Anritsu
API Technologies to Showcase RF, Microwave and Millimeter Wave Product Solutions at the EuMW 2014 - API Technologies
ATW Companies to Highlight Waveguide Tubing at the European Microwave Week 2014 - ATW Companies
Ruckus Wireless Chooses TriQuint’s High-Power WLAN Modules for 5G 802.11ac Applications - TriQuint
Knowles Brands to Showcase Products at the Electronica 2014 - Knowles
More News
White Papers
How to Properly Design as In-Building DAS - Part I - Use of Directional Couplers in DAS - Bird Technologies
Testing S-Parameters on Pulsed Radar Power Amplifier Modules - Rohde & Schwarz
Understanding Interference Hunting - Anritsu
EM Simulation of Automotive Radar Mounted in Vehicle Bumper - Remcom
mmWave Substrate Lens Antenna for Wireless Communications - FEKO
More White Papers
Upcoming Events
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European Microwave Week 2014

Date: 5-10 October 2014

Location: Rome, Italy

 
More Upcoming events
Popular RF Transistors on everything RF
RF Transistor
175 to 870 MHz RF MOSFET Transistor meets ROHS2 Standards

RF Transistor from Mitsubishi Electric US, Inc.

The RD07MUS2B from Mitsubishi is a RF Transistor that operates from 175 MHz to 870 MHz. It has been specifically designed for VHF/UHF/870 MHz RF power amplifiers applications. The transistor can provide up to 7 W of power and a gain of 13.8 dB with 65% efficiency. It requires a supply of 1.5 V to operate and available in a surface mount package.
 
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LDMOS Transistor
1.8 to 600 MHz LDMOS Transistor Provides 300 W CW Power

LDMOS Transistor from Freescale

The MRFE6VP6300H from Freescale is an RF power field effect transistor based on LDMOS technology, operates from 1.8 to 600 MHz. The transistor has been designed for high VSWR industrial, broadcast (analog and digital), aerospace and radio/land mobile applications. It provides up to 300 W of CW power and requires a supply of 50 V to operate.
 
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LDMOS Transistor
500 to 1400 MHz, 25 W Pulsed Power LDMOS Transistor

LDMOS Transistor from NXP Semiconductors

The BLL6H0514-25 from NXP Semiconductor is a LDMOS driver transistor intended for pulsed applications that operates from 0.5 GHz to 1.4 GHz. It provides up to 25 W of pulsed power with a gain of 19 dB and an efficiency of 50%. It is available in ceramic, flanged package with integrated ESD protection.
 
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GaN Transistor
2.5 to 2.7 GHz GaN Transistor Provides 30 W with 50 V Supply

GaN Transistor from Cree

The CGHV27030S from Cree is an unmatched, GaN high electron mobility transistor (HEMT) which operates from 2.5 GHz to 2.7 GHz. It provides up to 30 W of power and requires a 50 V supply for operation. The transistor is available in a 3mm x 4mm, surface mount, dual-flat-no-lead (DFN) package.
 
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GaN Transistor
DC to 18 GHz - 6 Watt GaN RF Transistor

GaN Transistor from Cree

The CGHV1J006D is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 18000 MHz and a gain of 17 dB with a supply voltage of 40 V . This Gan Transistor can provide an output power of up to 6 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.
 
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GaN Transistor
DC to 6 GHz GaN Transistor Provides 30 Watts

GaN Transistor from Cree

The CGH27030S is an unmatched GaN HEMT transistor that operates from DC to 6 GHz. It can provide a power of up to 30 W and requires a 28 V supply for operation. The transistor has been designed for high efficiency, high gain and wide bandwidth capabilities making it ideal for LTE, 4G Telecom and BWA amplifier applications. It is available in a 3 x 4 mm surface mount DFN package.
 
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LDMOS Transistor
700 W L-Band LDMOS RF Transistor for Radar Systems from 1200 to 1400 MHz

LDMOS Transistor from Infineon Technologies

The PTVA127002EV is a 700W L-Band RF power transistor for radar systems operating in the 1200 – 1400 MHz frequency range. This transistor is based on a 50V LDMOS power transistor technology and exhibits an efficiency of typically 55 percent across the 1200-1400 MHz band, with a P1dB output power of 700 W, 16dB gain and low thermal resistance characteristics when measured with a 300 µS 10% duty cycle pulse.
 
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RF Transistor
1800 to 2200 MHz LDMOS Transistor Provides 28 Watts Power

RF Transistor from Infineon Technologies

The PTFC210202FC from Infineon Technologies is a high power RF LDMOS FET that has been designed for use in cellular amplifier applications in from 1800 to 2200 MHz. It provides up to 28 W of power and requires a 28 V supply for operation. It is available in a RoHS package.
 
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GaN Transistor
DC to 2 GHz GaN RF Power Transistor with 316 Watt P3dB

GaN Transistor from Triquint

The TriQuint T1G2028536-FS from Triquint is a Gallium Nitride (GaN) RF power transistor which operates from DC to 2 GHz. It provides over 285 W of power(P3dB) with a gain of 18 dB and requires a 36 V supply. This GaN transistor is ideal for military and civilian radar, professional and military radio communications, test instrumentation, GPS communication and avionics.
 
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GaN Transistor
DC to 3.5 GHz Flangeless GaN RF Power Transistor

GaN Transistor from Triquint

The T2G4003532-FL from TriQuint is a 30 W (P3dB) discrete GaN transistor that operates from DC to 3.5 GHz. It has a gain of 21.6 dB and a PAE (P3dB) of 57.6.7% at 3.5 GHz. This GaN HEMT transistor requires a 32 V supply to operate and is available in surface mount package. It can be used for Military, Radar, Communication, Test Instrumentation applications.
 
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RF Transistor
10 W CW/Pulsed Wideband GaN Transistor from DC to 3.5 GHz in a Plastic Package

RF Transistor from MACOM

The MAGX-000035-01000P is a GaN on SiC unmatched power transistor that operates from DC to 3.5 GHz. This wideband transistor provides 10 W CW / Pulsed power and requires a 50 V supply for operation. It is available in a compact plastic package that measures 3 x 6 mm 14-Lead DFN.
 
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RF Transistor
DC to 3.5 GHz Pulsed Power Transistor

RF Transistor from MACOM

The MAGX-000035-045000 is an unmatched Gallium Nitride (GaN) on SiC pulsed power transistor that operates from DC to 3500 MHz. It has a 1 ms pulse with a 10% duty cycle, 45 W peak, high gain, efficiency, bandwidth and ruggedness over its bandwidth. The transistor is ideal for civilian and military radar pulsed applications.
 
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GaN Transistor
2700 to 3500 MHz, 100 W GaN Transistor

GaN Transistor from Microsemi

The 2735GN – 100M from Microsemi is an internally matched Class AB GaN transistor which operates from 2700 to 3500 MHz. It provides up to 100 W of power with a gain of 11 dB and an efficiency of 48%. It requires a supply voltage of 60 V and is ideal for general purpose driver amplifiers and for S-band radar applications. This GaN Transistor is available in a flanged 55-QP package and utilizes gold metallization and eutectic attach to provide highest reliability and superior ruggedness.
 
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RF Transistor
NPN Silicon Bipolar Transistor for use in 900 MHz, 1.8 GHz and 2.4 GHz Systems

RF Transistor from Avago Technologies

The AT-41533 from Avago Technologies is a NPN silicon bipolar transistor for use in 900 MHz, 1.8 GHz and 2.4 GHz systems. It is ideal for use in battery powered applications in cellular/PCS and other wireless markets. It has a noise figure of 1.6 dB and provides up to 14.5 dBm of power at 1 dB. The transistor is available in SOT-23 SMT plastic package.
 
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RF Transistor
DC to 6 GHz GaN RF Transistor with 15 Watts Power

RF Transistor from Triquint

The T2G6001528-SG from Triquint is a GaN RF power transistor that operates from DC to 6 GHz. It has been designed to optimize power and efficiency at high drain bias operating conditions. The transistor can provide up to 15 W of power with gain of 15.5 dB and requires a 28 V supply. It is available in a compact RoHS package that measures 5.08 x 7.37 x 2.41 mm.
 
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LDMOS Transistor
136 to 941 MHz RF Power LDMOS Transistor with VSWR > 65:1

LDMOS Transistor from Freescale

The AFT05MS004N is a high gain amplifier that operates from 136 to 941 MHs. It has exceptional ruggedness at a > 65:1 VSWR survivability rating for continuous reliable operation in extreme environments. The device is available in a cost-effective SOT-89 plastic package and is part of the Freescale product longevity program. The AFT05MS004N is ideal for a wide range of applications including public safety radios, professional mobile radios, electric metering, M2M communications and industrial drivers.
 
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EuMW 2014 Coverage on everything RF
 
 
 
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