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8 W GaN Power HEMT Die from DC to 26 GHz |
RF Transistor
from BeRex, Inc.
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The BCG008 from BeRex is a GaN Power HEMT Die that is suited for amplifier applications from DC to 26 GHz. At a 12 GHz test frequency, it delivers a saturated output power of 8 W (~39 dBm) with a gain of more than 8 dB and power-added efficiency (PAE) of 72%. This GaN-based transistor has been developed using state-of-the-art metallization with SI3N4 passivation and is screened for reliability. |
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