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| New RF and Microwave Products this Week |
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| Ka-Band GaN MMIC Amplifier from 27.5 to 31 GHz |
RF Amplifier
from Microchip Technology
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| The GMICP2731-10 from Microchip Technology is a Ka-Band MMIC Power Amplifier that operates from 27.5 to 31 GHz. It delivers a saturated output power of 39 dBm with a small signal gain of 22 dB and has a power added efficiency of 22%. The amplifier is fabricated using 0.15 µm GaN SiC technology and requires a bias voltage of 24 V while drawing less than 224 mA of current. It can be used in commercial and defense satellite communication systems, 5G networks, and other aerospace and defense systems. |
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| 3.1-3.5/9-11 GHz Reconfigurable Dual-Band GaN MMIC Amplifier |
RF Amplifier
from Qorvo
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| The QPA0007 from Qorvo is a Reconfigurable Dual-Band GaN MMIC Amplifier that operates from 3.1-3.5 GHz and 9-11 GHz. In the S-band (3.1-3.5 GHz), it delivers a saturated output power of 32 W with a gain of 21 dB and has a PAE of 47 %. In the X band (9-11 GHz), it delivers a saturated output power of 28 W with a gain of 18.5 dB and has a PAE of 32 %. This amplifier is ideal for defense, weather, and commercial avionics applications. |
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| 800 W GaN Solid-State Power Amplifier from 9.3 to 9.7 GHz |
RF Amplifier
from RFHIC
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| The RRM9397800-59A from RFHIC is a Solid-State Power Amplifier that operates from 9300 to 9700 MHz. It delivers an output power of 800 W with a gain of 59 dB and has an efficiency of 20%. The amplifier has a duty cycle of up to 10% and a pulse width of 100 us. It is built using RFHIC’s cutting edge gallium-nitride (GaN) on SiC HEMT technology providing excellent thermal stability, high breakdown voltage, and efficiency. |
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| 10 MHz Highly Stable Miniature OCXO |
OCXO
from Dynamic Engineers
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| The DOCXO2020AW-10MHz-A-V from Dynamic Engineers is a Highly Stable Miniature OCXO with an operational frequency of 10 MHz. It provides a sinewave output with a phase noise of -160 dBc/Hz at 100 kHz offset and has a frequency stability of up to ±0.5 ppb. The oscillator requires a supply voltage of 3.3 V and consumes less than 400 mA of current. |
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| UltraCMOS Reflective SPDT RF Switch from 5 to 1794 MHz |
RF Switch
from pSemi, A Murata Company
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| The PE42726 from pSemi is a Reflective SPDT RF Switch that operates from 5 to 1794 MHz. It has a switching time of 38 µs, an insertion loss of less than 0.55 dB and provides more than 19 dB of isolation. The switch is manufactured using silicon-on-insulator (SOI) technology on a sapphire substrate, offering the performance of GaAs with the economy and integration of conventional CMOS. It has been designed for use in cable TV applications including DOCSIS 3.0/1 cable modems, set-top boxes and residential gateways. |
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| 5 GHz Diplexer for UNII Bands 1 & 3 |
Diplexer
from Johanson Technology
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| The 5200DP44A5800 from Johanson Technology is a 5 GHz Diplexer with a lower passband from 5100 to 5300 MHz and a higher passband from 5700 to 5900 MHz. It can handle an input power of up to 3 W (CW) and has an insertion loss of 1.6 dB in the passband and provides over 20 dB of attenuation in the stopbands. The diplexer is available as a ceramic chip that measures 4.5 x 3.1 x 1.8 mm. |
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