| New RF and Microwave Products this Week |
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| 3-Stage LDMOS Doherty MMIC from 3300 to 3800 MHz | |
RF Transistor
from Ampleon
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| The B11G3338N80D from Ampleon is a 3-Stage Fully Integrated Doherty MMIC that operates from 3300 to 3800 MHz. It provides a power gain of 34 dB with a drain efficiency of more than 18% and has a P1dB of 48.7 dBm. This dual section amplifier has been developed using LDMOS technology and has an integrated carrier and peaking device, input splitter and output combiner, and pre-match in each section. |
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Download Datasheet
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| Contributed by Huber+Suhner | | The Relevance of Phase Stability over Temperature in Microwave Cables | | Phase stability in microwave cables has become increasingly important in applications where temperature plays an essential role. The challenge is well known in the RF cable industry: PTFE, despite having excellent dielectric properties especially at high frequencies, making it an excellent insulator, also shows a non-linear change in phase when subjected to the 15–25 °C temperature range. Click here to learn more. | | | |
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| Discrete GaAs pHEMT Transistor Die from DC to 20 GHz | |
RF Transistor
from Qorvo
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| The QPD2018D from Qorvo is a Discrete 180-micron GaAs pHEMT transistor that operates from DC to 20 GHz. It provides a gain of 14 dB with a power-added efficiency of 55% and has a noise figure of 1 dB. This transistor is designed using Qorvo's standard 0.25 um power pHEMT production process featuring advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions. |
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Download Datasheet
Product Details | |
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| Interview with Remcom | | Interview with Jeff Barney and Greg Skidmore from Remcom | | everything RF recently interviewed Jeff Barney, a Product Manager at Remcom, and Greg Skidmore, Director of Remcom’s Propagation Software Group. Remcom provides innovative electromagnetic simulation and wireless propagation software for commercial users and U.S. government sponsors. Their suite of complementary products work together to provide complete end-to-end design and analysis of complex devices in real world scenarios. Read the interview. | | | |
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