Airfast™ Devices Designed for Extreme Ruggedness, Gain and Stability
Richardson RFPD, Inc. announced the availability and full design support capabilities for two new laterally diffused metal oxide semiconductor (LDMOS) power transistors targeting land mobile radio from Freescale Semiconductor, Inc.
The two RF power LDMOS transistors are the first production devices released under Freescale's rapidly expanding portfolio of Airfast RF power products. The AFT05MS031N and AFT09MS031N are designed to meet the requirements of the next generation like voice, video, and data services for first responders through the deployment of LTE networks, as well as the interoperability of Project 25 (P25). These unmatched 12V devices offer high gain and efficiency over the entire VHF and UHF frequency bands from 136-941 MHz. And for the first time, these 12V LDMOS transistors incorporate Freescale's enhanced ruggedness feature of >65:1 VSWR under both overvoltage and 3 dB overdrive conditions, enabling the devices to survive extreme mismatch conditions.
Key features of the AFT05MS031N include:
• Frequency range: 136-520 MHz
• Ruggedness >65:1 VSWR
• Output power: > 31W
• High gain: less than .5W drive for rated output power
• >70% efficiency
Key features of the AFT09MS031N include:
• Frequency range: 764-941 MHz
• Ruggedness >65:1 VSWR
• Output power: > 31W
• High gain: less than 0.6W drive for rated output power
• >70% efficiency.
