Ampleon has launched the BLF0910H9LS600, a 600 Watt LDMOS power amplifier transistor for RF energy applications. This is the first RF energy transistor using Ampleon’s latest Gen9HV 50 V LDMOS process, a node that has been optimized to deliver greatly increased efficiency, power and gain. It is designed for continuous wave (CW) RF energy applications in the 900 to 930 MHz ISM band like industrial heating.
The transistor is available in a compact ceramic SOT502 package, and combines high output power with best in class operating efficiency in a small footprint. With a high operating efficiency, typically above 68 %, the need for cooling is kept to a minimum, helping to lower the space required by the transistor. Lower space requirements help reduce the cost of amplifier designs.
The BLF0910H9LS600 provides a high gain of typically 19.8 dB, measured with a VDS of 50 V in a 915 MHz CW class AB application, which helps to increase the overall amplifier efficiency. It has integrated ESD protection and internal input matching. The matching increases the transistor input impedance and simplifies the design of the PCB matching structures to facilitate a compact amplifier design.
By using two of these compact SOT502 packaged 600 Watt transistors, it is possible to architect a 1.2 kW RF power amplifier in the same space as a single SOT539 package. This architecture also contributes to a lower transistor temperature resulting in effectively higher efficiency than a single SOT539 solution. Click here for more information on this product.
