Infineon Technologies has introduced its L-Band RF power transistor with 700 W of output power for radar systems operating in the 1200 to 1400 MHz frequency range. This integrated high power device lowers the part count and reduces system cost and improves reliability while maintaining high ruggedness.
Radar systems emit a high-powered electronic pulse within a specific frequency range and detect the return echoes of each pulse to form an image of distant objects. The transistors used in the power supply of these pulsed systems must be highly efficient and capable of driving a stable signal in all operating conditions.
The PTVA127002EV from Infineon, is well-suited for L-Band radar systems used in air traffic control and weather observation applications. High efficiency corresponds with low heat output, and high ruggedness (ability to withstand 10:1 VSWR load mismatch) further contributes to the advantages of low component count made possible by the 700W output.
Based on the company’s 50V LDMOS power transistor technology, it exhibits excellent efficiency; typically 55 percent across the 1200-1400 MHz band, with a P1dB output power of 700W, 16dB gain and low thermal resistance characteristics when measured with a 300 µS 10% duty cycle pulse.
With the new addition, Infineon now offers a family of RF power transistors for 1200 – 1400 MHz system applications with rated power output of 25 W, 50 W, 350 W and 700 W. In addition to ruggedness, common specifications for each device include wide gate source voltage range (-6V to 12V), and integrated electrostatic discharge (ESD) protection.
