EMD1710QFN4

RF Amplifier by Eclipse MDI (5 more products)

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EMD1710QFN4 Image

TThe EMD1710QFN4 from Eclipse Microwave is a GaAs MMIC PHEMT Low Noise Amplifier that operates from 2 to 20 GHz. It delivers a gain of more than 11.5 dB with a noise figure of less than 4.4 dB and a P1dB of 18 dBm. The LNA requires a supply voltage of 5 V and consumes 83 mA of current. This RoHS-compliant amplifier is available in a leadless, surface-mount QFN package that measures 4 x 4 mm and is ideal for commercial and industrial applications.

Product Specifications

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Product Details

  • Part Number
    EMD1710QFN4
  • Manufacturer
    Eclipse MDI
  • Description
    GaAs MMIC PHEMT Low Noise Amplifier from 2 to 20 GHz

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
    IC/MMIC/SMT
  • Industry Application
    Commercial, Industrial
  • Frequency
    2 to 20 GHz
  • Gain
    11.5 to 13.2 dB
  • Gain Flatness
    +/-0.20 to +/-0.40 dB
  • Noise Figure
    2.4 to 4.4 dB
  • Output Power
    15.2 to 18.9 dBm
  • Output Power
    0.03 to 0.08 W
  • P1dB
    15.2 to 18.9 dBm
  • P1dB
    0.03 to 0.07 W
  • Grade
    Commercial
  • IP3
    28 dBm
  • IP3
    0.63 W
  • Saturated Power
    19 to 20.5
  • Saturated Power
    0.07 to 0.1 W
  • Input Power
    18 dBm
  • Input Power
    0.063 W
  • Sub-Category
    Distributed Amplifier
  • Input Return Loss
    11 dB
  • Output Return Loss
    10 dB
  • Supply Voltage
    5.0 to 8.0 V
  • Current Consumption
    83 mA
  • Transistor Technology
    PHEMT
  • Technology
    GaAs
  • Package Type
    Surface Mount
  • Package
    Leadless QFN
  • Dimensions
    4 x 4 mm
  • Operating Temperature
    -55 to 150 Degree C
  • Storage Temperature
    -40 to 85 Degree C
  • RoHS
    Yes

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