The RRP1113100-50 from RFHIC is a GaN-on-SiC Power Amplifier Pallet that operates from 1164 to 1300 MHz. It delivers a CW output power of 100 W with a power gain of 50 dB and an efficiency of 45%. This power amplifier is fabricated using RFHIC’s gallium-nitride on silicon carbide (GaN-on-SiC) high-electron-mobility (HEMT) technology and has a VSWR of less than 2.0:1. It has spurious levels of better than 60 dBc and harmonic levels of less than of 10 dBc.
The RRP1113100-50 requires a DC supply of 32 V and consumes 8 A of current. It is available in a module that measures 147 x 49.5 x 23 mm and has an SMA female connector at the input and an N-type female connector at the output port. This amplifier is ideal for radar, drone systems, and jamming systems applications.
