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IB1011M1100

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The IB1011M1100 from Integra Technologies, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 60.41 to 61.91 dBm, Power(W) 1552.39 W, Duty_Cycle 0.02, Gain 9 dB. Tags: Flanged. More details for IB1011M1100 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IB1011M1100
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1030 to 1190 MHz, 9 dB Bipolar Transistor

General Parameters

  • Transistor Type
    Bipolar
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Avionics
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    60.41 to 61.91 dBm
  • Power(W)
    1552.39 W
  • Peak Output Power
    1100 W
  • Pulsed Width
    32 us
  • Duty_Cycle
    0.02
  • Gain
    9 dB
  • Power Gain (Gp)
    8.8 to 10.3 dB
  • Supply Voltage
    60 V
  • Breakdown Voltage
    85 V (Collector Emmiter)
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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