1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Integra Technologies, Inc.
  6. IGN2731L10

IGN2731L10

Download Datasheet
Request Quote

Note : Your request will be directed to Integra Technologies, Inc..

IGN2731L10 Image

The IGN2731L10 from Integra Technologies, Inc. is a RF Transistor with Frequency 2.7 to 3.1 GHz, Power 40 to 42.3 dBm, Power(W) 16.98 W, Duty_Cycle 0.5, Gain 15 dB. Tags: Flanged. More details for IGN2731L10 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IGN2731L10
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    2.7 to 3.1 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.7 to 3.1 GHz
  • Power
    40 to 42.3 dBm
  • Power(W)
    16.98 W
  • Pulsed Width
    40 ms
  • Duty_Cycle
    0.5
  • Gain
    15 dB
  • Power Gain (Gp)
    13 to 16.3 dB
  • Supply Voltage
    32 V
  • Threshold Voltage
    -2.5 V
  • Quiescent Drain Current
    10 to 20 mA
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
View similar products