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ILD1012S500HV

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The ILD1012S500HV from Integra Technologies, Inc. is a RF Transistor with Frequency 1.025 to 1.150 GHz, Power 56.99 to 58.99 dBm, Power(W) 792.5 W, Duty_Cycle 0.01, Gain 16.1 dB. Tags: Flanged. More details for ILD1012S500HV can be seen below.

Product Specifications

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Product Details

  • Part Number
    ILD1012S500HV
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1025 to 1150 MHz, 16.85 dB LDMOS Transistor

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Avionics
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.025 to 1.150 GHz
  • Power
    56.99 to 58.99 dBm
  • Power(W)
    792.5 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.01
  • Gain
    16.1 dB
  • Power Gain (Gp)
    15.85 to 17.85 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    2.5 to 10 V
  • Breakdown Voltage
    70 V (Collector Emmiter)
  • Breakdown Voltage - Drain-Source
    100 V
  • Drain Efficiency
    0.45
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • Package
    Ceramic
  • RoHS
    Yes
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 200 Degree C

Technical Documents
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