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CGH80030D

RF Transistor by MACOM (309 more products)
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The CGH80030D from MACOM is a GaN HEMT that operates from DC to 8 GHz. This transistor provides an output power of over 30 Watts with a gain 16.5 dB and efficiency over 65%. It requires a supply voltage of 28 Volts and has a breakdown voltage of 84 Volts. This transistor is available as a bare die and is ideal for cellular and test and measurement applications.

Product Specifications

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Product Details

  • Part Number
    CGH80030D
  • Manufacturer
    MACOM
  • Description
    30 W, 8.0 GHz, GaN HEMT Die

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Test & Measurement, Wireless Infrastructure, Broadcast
  • Application
    Cellular, 3G / WCDMA, EDGE, CDMA, Radio
  • CW/Pulse
    CW
  • Frequency
    DC to 6 GHz
  • Power
    44.77 dBm
  • Power(W)
    29.99 W
  • Saturated Power
    44.77 dBm
  • Small Signal Gain
    16.5 dB
  • VSWR
    10.00:1
  • Class
    A, AB
  • Supply Voltage
    10 V
  • Threshold Voltage
    -3.6 to -2.4 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Efficiency
    0.65
  • Drain Current
    200 mA
  • Package Type
    Die
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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