The CGHV1J006D from MACOM is a GaN High Electron Mobility Transistor that operates from 10 MHz to 18 GHz. It provides a saturated output power of 6 W with a small signal gain of 17 dB and a PAE of 60%. The transistor is manufactured using a 0.25 μm gate length fabrication process that offers an excellent high frequency, high efficiency features. It requires a supply voltage of 40 V and draws 1.2 mA of current. The transistor is available as a bare die that measures 800 x 84 microns and is suitable for satellite communications, PTP communications links, marine radars, pleasure craft radars, port vessel traffic services, broadband amplifiers, and high efficiency amplifier applications.
