MRF177

RF Transistor by MACOM (309 more products)

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MRF177 Image

The MRF177 from MACOM is a RF Transistor with Frequency 5 to 400 MHz, Power 50 dBm, Power(W) 100 W, Gain 12 dB, Power Gain (Gp) 10 to 12 dB. Tags: Flanged. More details for MRF177 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MRF177
  • Manufacturer
    MACOM
  • Description
    Si Based TMOS Transistor

General Parameters

  • Transistor Type
    MOSFET
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Radar, ISM, Broadcast, Commercial, Avionics
  • Application
    Communication System, Military, Medical, Radar, ISM Band
  • CW/Pulse
    CW
  • Frequency
    5 to 400 MHz
  • Power
    50 dBm
  • Power(W)
    100 W
  • Gain
    12 dB
  • Power Gain (Gp)
    10 to 12 dB
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    1 to 6 Vdc
  • Drain Gate Voltage
    65 Vdc
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Gate-Source (Vgs)
    40 Vdc
  • Leakage Current
    1 µAdc (Gate body leakage)
  • Package Type
    Flanged
  • Package
    Flange Ceramic

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