The NPTB00004B from MACOM is a GaN Power Transistor that operates from DC to 6 GHz. It delivers a saturated output power of 5 W (~37.1 dBm) with a small signal gain of 16 dB and a drain efficiency of 63.7%. The transistor supports CW, pulsed, and linear operation. It is available in an industry-standard SOIC plastic package that measures 4.9 x 3.9 x 1.47 mm and requires a DC supply of 28 V. This transistor is suitable for use in defence communications, land mobile radio, avionics, wireless infrastructure, ISM and VHF/UHF/L/S-Band radar applications.
