PTVA104501EH

RF Transistor by MACOM (309 more products)

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The PTVA104501EH from MACOM is an LDMOS FET that operates from 960 to 1215 MHz. It delivers an output power of up to 450 W with a gain of 17.5 dB and has a typical drain efficiency of 58%. The device requires a 50 V supply. Manufactured on MACOM's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. The FET is available in a thermally-enhanced package that measures 34.03 x 9.78 x 1.01 mm with a bolt-down flange package and is designed for power amplifier amplifications.

Product Specifications

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Product Details

  • Part Number
    PTVA104501EH
  • Manufacturer
    MACOM
  • Description
    450 W LDMOS FET from 960 to 1215 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Radar
  • CW/Pulse
    Pulse
  • Frequency
    960 to 1215 MHz
  • Power
    56.53 dBm
  • Power(W)
    450 W (Peak)
  • Duty_Cycle
    10%
  • Gain
    16.5 to 18 dB
  • Efficiency
    53 to 61 %
  • Input Return Loss
    -9.5 to -6 dB
  • VSWR
    10.0:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    105 V
  • Voltage - Gate-Source (Vgs)
    3 to 4 V
  • Drain Efficiency
    53 to 58 %
  • Drain Leakage Current (Id)
    1 to 10 µA
  • Gate Leakage Current (Ig)
    1 µA
  • Lead Free
    Yes
  • On Resistance
    0.1 Ohms
  • Thermal Resistance
    0.25 C/W
  • RoHS
    Yes
  • Operating Temperature
    0 to 55 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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