GAN_960-1215MHZ_50W

Note : Your request will be directed to Microchip Technology.

The GAN_960-1215MHZ_50W from Microchip Technology is a RF Transistor with Frequency 960 to 1215 MHz, Power 46.98 dBm, Power(W) 50 W, Duty_Cycle 21%, Power Gain (Gp) 15.6 dB. Tags: Ceramic. More details for GAN_960-1215MHZ_50W can be seen below.

Product Specifications

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Product Details

  • Part Number
    GAN_960-1215MHZ_50W
  • Manufacturer
    Microchip Technology
  • Description
    50 W, GaN on SiC Transistor from 960 to 1215 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC
  • Application Industry
    Avionics
  • CW/Pulse
    Pulse
  • Frequency
    960 to 1215 MHz
  • Power
    46.98 dBm
  • Power(W)
    50 W
  • Pulsed Width
    32 uSec
  • Duty_Cycle
    21%
  • Power Gain (Gp)
    15.6 dB
  • Efficiency
    63%
  • Class
    Class AB
  • Supply Voltage
    50 V
  • Package Type
    Ceramic
  • Grade
    Commercial, Military