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MGF3022AM

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The MGF3022AM from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency DC to 2.4 GHz, Power 16.5 dBm, Power(W) 0.04 W, P1dB 14 dBm, OIP3 32 dBm. Tags: Flanged. More details for MGF3022AM can be seen below.

Product Specifications

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Product Details

  • Part Number
    MGF3022AM
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    DC to 2.4 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    InGaAs
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast
  • Application
    L Band, C Band
  • CW/Pulse
    CW
  • Frequency
    DC to 2.4 GHz
  • Power
    16.5 dBm
  • Power(W)
    0.04 W
  • P1dB
    14 dBm
  • OIP3
    32 dBm
  • Gain
    15 dB
  • Power Gain (Gp)
    15.5 to 18 dB
  • Noise Figure
    1 dB
  • Supply Voltage
    3 V
  • Breakdown Voltage
    -15 to -8 V (Gate Drain)
  • Drain Bias Current
    33 mA
  • Quiescent Drain Current
    33 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -40 to 125 Degree C

Technical Documents
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