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MGF4941CL

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The MGF4941CL from Mitsubishi Electric US, Inc. is a RF Transistor with Frequency DC to 25.2 GHz, Gain 7.5 to 10 dB, Noise Figure 2.4 to 3.8 dB, Supply Voltage 1.5 V, Storage Temperature -55 to 125 Degree C. Tags: Flanged. More details for MGF4941CL can be seen below.

Product Specifications

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Product Details

  • Part Number
    MGF4941CL
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    DC to 25.2 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    InGaAs
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast
  • Application
    K Band
  • CW/Pulse
    CW
  • Frequency
    DC to 25.2 GHz
  • Gain
    7.5 to 10 dB
  • Noise Figure
    2.4 to 3.8 dB
  • Supply Voltage
    1.5 V
  • Breakdown Voltage
    -3 V (Gate Drain)
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C

Technical Documents
View details on the manufacturer's website
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