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MGFK45G3745

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The MGFK45G3745 from Mitsubishi Electric is an internally matched, GaN HEMT that operates from 13.75 to 14.50 GHz. It delivers an output power of 30 W with a gain of 9.5 dB and has a power added efficiency (PAE) of 31%. It requires a supply voltage of 24 V.  The transistor has an N-channel Schottky gate and is available in a GF-68 package that measures 21.0 x 12.9 mm and is designed for use as an amplifier in Ku-band satellite communication (SATCOM) earth station applications.

Product Specifications

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Product Details

  • Part Number
    MGFK45G3745
  • Manufacturer
    Mitsubishi Electric US, Inc.
  • Description
    30 W GaN HEMT from 13.75 to 14.5 GHz for SATCOM Applications

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    SATCOM, RF Energy
  • Application
    Satellite, Ku Band, Industrial
  • Frequency
    13.75 to 14.50 GHz
  • Power
    45.3 dBm
  • Power(W)
    33.88 W
  • Gain
    8.5 to 9.5 dB
  • Class
    Class AB
  • Supply Voltage
    24 V
  • Input Power
    41 dBm
  • Thermal Resistance
    1.6 to 2 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Grade
    Space
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Power added efficiency:- 31 %,

Technical Documents
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