MGFK50G3745

The MGFK50G3745 from Mitsubishi Electric is a GaN High-electron-mobility transistor (HEMT) that operates from 13.75 to 14.5 GHz. It delivers an output power of 100 W (50 dBm) with a power gain of 10 dB and has a power-added efficiency (PAE) of 30%. This transistor is based on GaN HEMT technology with an integrated N-channel Schottky gate. It required a DC supply of 24 V and draws 2.4 A of current. The transistor is available in an internally-matched surface-mount package that measures 24.0 x 17.4 x 7.2 mm and is suitable for use in Class AB linear amplifiers and amplifiers in Ku-band for SATCOM earth station applications.