The MHT1108N from NXP is a RF LDMOS transistor that operates from 2400 to 2500 MHz. It delivers an output power of 12.5 W and a gain of 18.6 dB with an efficiency of 56.3 %. This transistor has an integrated ESD protection and is qualified for operation at 32 Vdc. It is available in a plastic DFN package that measures 4 x 6 mm and is ideal for consumer and commercial cooking applications.

Product Specifications

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Product Details

  • Part Number
    MHT1108N
  • Manufacturer
    NXP Semiconductors
  • Description
    2450 MHz RF LDMOS Transistor for Consumer and Commercial Cooking

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, RF Energy, Commercial
  • Application
    ISM Band
  • CW/Pulse
    CW
  • Frequency
    2.4 to 2.5 GHz
  • Power
    40.97 dBm
  • Power(W)
    12.5 W
  • CW Power
    12.5 W
  • P1dB
    41 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    18.6 dB
  • VSWR
    5.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    28 V
  • Threshold Voltage
    0.8 to 1.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.5629
  • Drain Current
    110 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    3.8 °C/W
  • Package Type
    Surface Mount
  • Package
    DFN 4 × 6 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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