The MRF1511N from NXP Semiconductors is a RF Transistor with Frequency 175 MHz, Power 39.03 dBm, Power(W) 8 W, Power Gain (Gp) 13 dB, VSWR 20.00:1. Tags: Surface Mount. More details for MRF1511N can be seen below.

Product Specifications

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Product Details

  • Part Number
    MRF1511N
  • Manufacturer
    NXP Semiconductors
  • Description
    Lateral N-Channel Broadband RF Power MOSFET, 175 MHz, 8 W, 7.5 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Broadcast, Commercial
  • Application
    Mobile, Radio, FM
  • CW/Pulse
    CW
  • Frequency
    175 MHz
  • Power
    39.03 dBm
  • Power(W)
    8 W
  • Power Gain (Gp)
    13 dB
  • VSWR
    20.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    7.5 V
  • Threshold Voltage
    1 to 2.1 Vdc
  • Voltage - Gate-Source (Vgs)
    20 Vdc
  • Drain Efficiency
    0.7
  • Drain Current
    150 mA
  • Thermal Resistance
    2 °C/W
  • Package Type
    Surface Mount
  • Package
    CASE 466-03, STYLE 1 PLD-1.5
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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