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GP1441

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GP1441 Image

The GP1441 from Polyfet RF Devices is a RF Transistor with Frequency 1 MHz to 3 GHz, Power 40 dBm, Power(W) 10 W, Power Gain (Gp) 11 dB, VSWR 10.0:1. Tags: Flanged. More details for GP1441 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GP1441
  • Manufacturer
    Polyfet RF Devices
  • Description
    10 W, GaN on SiC HEMT Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Communication
  • Frequency
    1 MHz to 3 GHz
  • Power
    40 dBm
  • Power(W)
    10 W
  • Power Gain (Gp)
    11 dB
  • VSWR
    10.0:1
  • Breakdown Voltage - Drain-Source
    250 V
  • Voltage - Drain-Source (Vdss)
    48 V
  • Voltage - Gate-Source (Vgs)
    -8 to 2 V
  • Drain Efficiency
    0.35
  • Drain Bias Current
    1 mA
  • Quiescent Drain Current
    0.05 A
  • Power Dissipation (Pdiss)
    30 W
  • Feedback Capacitance
    0.15 pF
  • Input Capacitance
    3 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    1.5 pF
  • Thermal Resistance
    5.45 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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