1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Sumitomo Electric Device Innovations
  6. FLM7785-18F

FLM7785-18F

Download Datasheet
Request Quote

Note : Your request will be directed to Sumitomo Electric Device Innovations.

FLM7785-18F Image

The FLM7785-18F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 7.7 to 8.5 GHz, Power 41.5 to 42.5 dBm, Power(W) 14.13 to 17.78 W, P1dB 41.5 to 42.5 dBm, Power Gain (Gp) 6 to 7 dB. Tags: Flanged. More details for FLM7785-18F can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FLM7785-18F
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 7.7 to 8.5 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Industry
    Communication, Wireless Infrastructure
  • Application Type
    C-Band, Communication
  • Application
    C Band, Communication System
  • Frequency
    7.7 to 8.5 GHz
  • Power
    41.5 to 42.5 dBm
  • Power(W)
    14.13 to 17.78 W
  • P1dB
    41.5 to 42.5 dBm
  • Power Gain (Gp)
    6 to 7 dB
  • Power Added Effeciency
    0.29
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    4700 to 5800 mA
  • IMD
    -45 to -42 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.6 to 1.8 Degree C/W
  • Package Type
    Flanged
  • Package
    IA
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Saturated Drain Current : 8100 to 12750 mA, Pinch-off Voltage : -3.5 to -1 V, Gain Flatness : ±0.6 dB, Channel Temperature Rise : 80 Degree C, Channel Temperature : 175 Degree C

Technical Documents
View details on the manufacturer's website
View similar products