The H008C11A from RFHIC is an RF Transistor that operates from 3400 to 3800 MHz. It delivers a saturated output power of 174 W with a power gain of 14.1 dB and a drain efficiency of 44%. This asymmetrical Doherty transistor is based on RFHIC’s GaN on SiC technology and requires a DC supply of 48 V. It is part of the OptiGaN product family that has been developed to optimize price and performance for wireless infra applications. This transistor is ideal for designing RF power amplifiers for cellular base stations for 4G, 4G LTE, and Open RAN applications. It is suitable for use in WiMAX, LTE, WCDMA, GSM, multi-band, multi-mode, multi-carrier, high-efficiency and Doherty amplifier applications.
