WP28010015

RF Transistor by WAVEPIA Co,. Ltd. (86 more products)

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The WP28010015 from Wavepia is a GaN HEMT Transistor that operates up to 10 GHz. It delivers up to 15 W of output saturated power with a small signal gain of more than 17 dB and has a drain efficiency of over 65%. The transistor requires a DC supply of 28 V and draws 80 mA of current. It is available as a bare-die that measures 1500 x 896 x 100 microns and is ideal for use in U/VHF amplifiers, broadband amplifiers, base station communication, drones, UAVs, WiMAX, LTE, WCDMA, GSM, WPT, V2X, and Radar applications.

Product Specifications

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Product Details

  • Part Number
    WP28010015
  • Manufacturer
    WAVEPIA Co,. Ltd.
  • Description
    15 W GaN HEMT Transistor Operates up to 10 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN
  • Application Industry
    Radar, Wireless Infrastructure, Wireless Communication
  • Application
    Amplifiers, GSM, 4G / LTE, UHF, 3G / WCDMA, WiMax, Base Station, Cellular, Radar
  • Frequency
    DC to 10 GHz
  • Power
    41.76 dBm
  • Power(W)
    15 W
  • Saturated Power
    15 W
  • Small Signal Gain
    17 dB
  • Transconductance
    340 mS/mm
  • VSWR
    10:1
  • Features
    High Breakdown Voltage, High Efficiency, Reliability Monitoring Supporting
  • Supply Voltage
    28 V
  • Threshold Voltage
    -3.2 V
  • Breakdown Voltage
    100 V
  • Drain Efficiency
    0.65
  • IMD
    -30 dBc
  • Junction Temperature (Tj)
    225 Degree C
  • Package Type
    Die
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Drain-source current :- 880 to 1050 mA/mm, Ohmic contact resistance :- 0.4 Ohm-mm

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