The H024 from RFHIC is a GaN-on-SiC Transistor that operates from 4500 to 4950 MHz. It delivers a saturated output power of 28 W with a gain of 14 dBi and a drain efficiency of 43%. This transistor is based on RFHIC’s OptiGaN technology that provides high-performance without stretching the budget. It requires a DC supply of 48 V. This RF transistor is available in a surface-mount package and is ideal for 4G, 4G LTE, and Open RAN applications.
