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1 Feb, 2016 - everything RF Newsletter
 
everything RF
Date: 1 Feb, 2016
 
International Microwave Symposium 2016
 
 
 
Top News Stories this Week
Skyworks Exceeds First Quarter FY16 Expectations - Skyworks
WiFi HaLow is the New Standard for Low-Power, Long-Range Wi-Fi - WiFi Alliance
Fujitsu Develops GaN Power Amplifier with Record Power for W-Band Wireless Transmissions - Fujitsu
Semtech LoRa Wireless RF Technology Used by IoT Challenge Finalists - Semtech
Ku-Band Block Upconverters Designed for Performance and Economy - Norsat
Sony Acquires Altair Semiconductor for $212 Million - Sony
TeliaSonera and Ericsson Announce 5G Collaboaration - Ericsson
XMA Corporation Appoints PMR as a Sales Representative - XMA Corporation
NSI and MI Technologies Merge to Create a Leader in Microwave Measurements - MI Technologies
Radio Frequency Systems Launches High-Performance Passive DAS Products - Radio Frequency Systems
Ultra-Small Bluetooth Module from TDK Ideal for Werable Devices - TDK
Genesys Software Enables Industry’s Fastest Realization of RF Systems and Circuits - Keysight
More News
Trending White Papers
Simple Method of Changing the Frequency Range of a Power Amplifier Circuit - Freescale
Design, Optimization and Production of an Ultra-Wideband (UWB) Receiver - National Instruments
Introduction to Radar System and Component Tests - Rohde & Schwarz
RF/Microwave Technologies- A Better Alternative In Defense Electronics - Mercury Systems
WLAN Antennas for Implementation in Gateways with MIMO Technology - Ethertronics
More White Papers
Upcoming Event
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EMV 2016

Date: 23 to 25 Feb, 2016

Location: Duesseldorf, Germany

 
More Upcoming events
Top GaN Products of 2015
RF Transistor
DC to 2.7 GHz GaN on Silicon Wideband Transistor

RF Transistor from MACOM

The NPT2024 is a wideband transistor that operates from DC to 2.7 GHz. It provides CW, pulsed, and linear operation with output power levels up to 200 W (53 dBm). It is the first transistor that has been developed on MACOM's 4th generation GaN on Silicon (GaN on Si) process. This process provides performance that rivals expensive GaN on Silicon Carbide (GaN on SiC) at a projected volume production cost structure below that of incumbent LDMOS technology.
 
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RF Transistor
3.5 GHz to 3.8 GHz GaN HEMT Transistor for 4G/LTE

RF Transistor from Mitsubishi Electric US, Inc.

The MGFS39G38L2 from Mitsubishi Electronics is a GaN-HEMT transistor that has been developed for use in 4G/LTE Base Station Transceivers from 3.5 GHz to 3.8 GHz. This GaN-HEMT provides up to 39 dBm of saturated power with a gain of 19 dB and drain efficiency of 67 %. It requires a supply of 50 V and is available in a compact package.
 
Product Details
 
RF Amplifier
GaN Amplifier Pallet from 2.11 to 2.17 GHz for LTE Applications

RF Amplifier from RFHIC

The RTP21080-20 from RFHIC is a GaN on SiC HEMT amplifier pallet that operates from 2110 MHz to 2170 MHz. It provides 80 Watts of average power with a gain of up to 55 dB and an efficiency of 42%. The amplifier has a peak power (Psat) of 56.2 dBm and has a return loss up to -12 dB. This Doherty amplifier is matched to 50 ohms and can be used as a WCDMA & LTE amplifier.
 
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RF Amplifier
2,000 Watts Power Amplifier from 1 GHz to 2.5 GHz

RF Amplifier from Empower RF

The Model 2180 is a high power solid state RF amplifier system for CW, modulated, and pulse applications. The amplifier operates from 1 GHz to 2.5 GHz delivers up to 2 kW CW of broadband output power in an 8U, air cooled chassis. This amplifier provides excellent performance for end applications that include, but are not limited to, test and measurement, electronic warfare, and communications.
 
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RF Amplifier
30 Watt S-Band Power Amplifier for Electronic Warfare

RF Amplifier from NuWaves Engineering

The NuPower 05E05A is a compact and highly efficient solid-state power amplifier (PA) module for S-band applications. The amplifier operates from 2000 to 2600 MHz and provides 30 Watts of CW power on average and near-constant-envelope waveforms. The connectorized PA module accepts a nominal 0 dBm (1 milliwatt) input signal and provides 44 dB of RF gain while operating at 40% DC power efficiency with a +28 VDC supply.
 
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RF Amplifier
80 Watt, 2 GHz to 6 GHz GaN Power Amplifier

RF Amplifier from CTT Inc

The AGM/060-4960 from CTT is a family of GaN power amplifiers which operates from 2 to 6 GHz. They provide an output power of 20 W to 80 W with a gain of over 60 dB and noise figure of 6 dB. The amplifier requires a 30 V supply voltage and draws a current of 15 A. It is available in a compact hermetically sealed package which has SMA Connectors and can operate up to 60°C.
 
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RF Amplifier
30 Watt, GaN MMIC Power Amplifier from 13.5 GHz to 14.5 GHz

RF Amplifier from Wolfspeed

The CMPA1D1E030D from Cree is a GaN HEMT power amplifier that operates from 13.5 to 14.5 GHz. This Ku-Band amplifier provides a small signal gain up to 27 dB, PSAT of 30 W and P3dB of 20 W. It has high breakdown voltage & thermal conductivity. It can be used for SATCOM applications.
 
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RF Amplifier
X-Band GaN Power Amplifier from 9 GHz to 10 GHz

RF Amplifier from Comtech PST

The BME99109-40 from Comtech PST is a GaN Solid State Power Amplifier that operates from 9 GHz to 10 GHz. It provides 40 watts of power with a gain of 46 dB, has a dynamic range of 30 dB, a VSWR of 1.5:1 and a duty cycle up to 100 %. It requires a DC supply of 36 Vdc to 45 Vdc and is available with SMA Female connectors.
 
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RF Transistor
2700 MHz to 3500 MHz GaN HEMT for LTE and Radar Applications

RF Transistor from Wolfspeed

The CGHV35060MP from Wolfspeed is a GaN HEMT that operates from 2700 MHz to 3500 MHz. This transistor is available in a small 6.5mm x 4.4mm plastic surface mount (SMT) package. This transistor provides an output power of over 75 Watts with a gain of more than 13.8 dB and efficiency of over 61% through the band. It is ideal for S Band Radars and LTE base stations.
 
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RF Transistor
2700 MHz to 3100 MHz, GaN HEMT for S-Band Radar Systems

RF Transistor from Wolfspeed

The CGHV31500F from Cree is a GaN HEMT that operates from 2700 MHz to 3100 MHz. It provides a saturated output power up to 600 Watts, has a power gain of 12.75 dB and efficiency of up to 60%. The transistor is available in a ceramic/metal flange package and is ideal for S-Band Radar Applications.
 
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RF Amplifier
30 Watt, 46 dB Gain, GaN Power Amplifier from 4 GHz to 18 GHz

RF Amplifier from Exodus Advanced Communications

The AMP1095 from Exodus Advanced Communications is a GaN solid state power amplifier that operates from 4 GHz to 18 GHz. It provides a power gain of 46 dB, has a VSWR of 5:1 and harmonics of more than 15 dB. The amplifier provides an output power (Psat) up to 30 W and P1dB of 20 W with a return loss up to 10 dB. It requires a supply of 32 Vdc and draws 19 A of current.
 
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RF Amplifier
1 KW GaN Pulsed Power Amplifier for X-Band Applications

RF Amplifier from Diamond Microwave

The DM-X1K0-01 is a 1KW GaN Pulsed Amplifier that has been designed as a compact alternative to vacuum tube amplifiers (TWT). It operates at X-Band Frequencies with a center frequency of 9.5 GHz and a 1.2 GHz bandwidth. The amplifier offers pulsed widths up to 100 µs with duty cycles up to 20%. This ultra-compact amplifier measures only 244mm x 134mm x 50mm excluding heatsink and connectors.
 
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RF Amplifier
28 to 32 GHz GaN Power Amplifier for Ka-Band Applications

RF Amplifier from Custom MMIC

The CMD217 from Custom MMIC is an 8.5 W GaN power amplifier that operates from 28 to 32 GHz. The power amplifier provides a gain of 20 dB with a saturated output power of 39.3 dBm with 35% efficiency. The CMD217 is matched to 50 Ohms eliminating the need for external DC blocks and RF port matching. It requires a 28 V to supply and draws 580 ma of current.
 
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RF Amplifier
27 to 31 GHz GaN HEMT for SATCOM and Radio Applications

RF Amplifier from Northrop Grumman

The APN228 is a GaN HEMT broadband amplifier from Northrop Grumman that operates from 27 to 31 GHz with a linear gain of 19.5 dB and a Psat of 41.2 dBm. The amplifier requires a 28 V DC supply and draws 1.2 A current.
 
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RF Amplifier
Non-ITAR Wideband 40 Watt GaN Amplifier from 2 GHz to 4 GHz

RF Amplifier from Teledyne Microwave Solutions

The TSA-213244 from Teledyne Microwave Solutions wideband compact GaN amplifier that operates from 2 GHz to 4 GHz. This 40 Watt amplifier meets the stringent airborne requirements of the most demanding commercial and military applications. The amplifier includes preamp and driver stages to produce a minimum overall gain of 50 dB.
 
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Top RF Amplifiers of 2015
 
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