Featured Products this Week . |
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Chip Attenuators with Alumina-Substrate from DC to 18 GHz |
Fixed Attenuator
from Inmet by Spectrum Control
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The PCAA Series from Inmet by Spectrum Control are Powerfilm Chip Attenuators that operate from DC to 18 GHz. They are available in attenuation values from 0 to 20 dB and have attenuation stability of 0.0001 dB/dB/°C. These attenuators can handle an input power of up to 5 W and have a VSWR of less than 1.5:1. They have an operating temperature range of -55°C to +150°C. |
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0.22 µH to 8 µH, Conical Inductor operating from 10 MHz to 40 GHz |
RF Inductor
from Coilcraft
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The BCL Series are conical inductors available in nine inductance values ranging from 0.22 to 8.0 micro H. They are designed specifically for broadband and high frequency applications, operating as a series of narrow-band inductors across a frequency range of 10 MHz to 40 GHz. The inductors are ideal for use in ultra-wideband bias tees, where the conical inductor provides the path for the DC bias injection or extraction while isolating the power source from the active device. |
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Impedance-Matched Pick-off Tee from DC to 110 GHz |
Pick off Tee
from HYPERLABS
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The HL9469 from HYPERLABS is a Pick-off Tee that operates from DC to 110 GHz. It can be used as a trigger source with minimum perturbation of the thru signal path and in 224 Gbps PAM4 communication systems. This pick-off can handle an input power of up to 20 dBm, has a thru insertion loss of 4.5 dB and pick-off insertion loss of 11 dB. |
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160 W GaN-on-SiC Power Amplifier from 20 to 800 MHz |
RF Amplifier
from RFHIC
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The RWP03160-2R from RFHIC is a GaN-on-SiC Power Amplifier that operates from 20 to 800 MHz. It delivers a saturated output power of 160 W with a small signal gain of 44 dB and an efficiency of 53.13%. This amplifier is fabricated using GaN-on-SiC technology that is attached to an Aluminum sub-carrier. It is fully matched for broadband performance and offers good thermal handling capabilities based on a patented technology. |
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GaAs pHEMT Low Noise Amplifier MMIC from 0.4 to 8 GHz |
RF Amplifier
from Mini Circuits
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The TSY-83LN+ from Mini-Circuits is a GaAs pHEMT Low Noise Amplifier MMIC that operates from 0.4 to 8 GHz. It provides a gain of up to 23 dB with a noise figure of less than 2.5 dB and has a P1dB output power of up to +22.9 dBm. This LNA MMIC is bypass mode capable and suitable for sensitive, high dynamic range receiver applications where a gain stage may need to be quickly bypassed in the presence of high-power RF signals. |
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Sponsored by Quantic Wenzel | |
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Low Noise Cryogenic Amplifier from 6 to 8.5 GHz |
RF Amplifier
from AmpliTech
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The APTC3-06000850-2K00-D2-V from AmpliTech is a Low Noise Cryogenic Amplifier that operates from 6.0 to 8.5 GHz. It has been designed for cryogenic applications down to 4K, with an industry-low Noise Figure of 25K at +296K and 2K at 4K case temperatures across the band. It provides a more than 40 dB of gain with a noise figure of less than 0.029 dB (at 4 K) and has a P1dB of -6 dBm. |
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FR1/FR2 Up/Down Frequency Converter IC for 5G Applications |
RF Up-down Converter
from Mobix Labs
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The MOBX222 from Mobix Labs is an Up/Down Frequency Converter IC that supports FR1 Baseband, C-Band (CBRS) and FR2 mmWave frequencies. It enables the use of input/output frequencies of DC – 800 MHz and 2.3 – 7 GHz IFs for up/down conversions to mmWave frequencies of 24.25 – 49 GHz. This IC includes a switch matrix that allows up/down conversions between 5G C-band and baseband signals for transmitting and receiving, and the FR1 Tx path integrates a high-linearity power amplifier and an RF power detector circuit. |
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10 W GaN Power Amplifier from 23 to 27.5 GHz |
RF Amplifier
from mmTron Inc
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The TMC152 from mmTron is a GaN Power Amplifier that operates from 23 to 27.5 GHz. It delivers a saturated output power of 40 dBm (10 W) with a gain of 23 dB and has a noise figure of 7 dB. This amplifier is matched to 50-ohms and eliminates the need for RF port matching. It has bond pads and backside Au-based metallization compatible with ribbon and wedge bonding and high conductivity epoxy and eutectic die attach methods. |
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Signal Source Analyzer from 1 MHz to 54 GHz |
Phase Noise Analyzer
from Keysight Technologies
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The E5058A SSA-X from Keysight Technologies is a Signal Source Analyzer with a frequency range from 1 MHz to 54 GHz. It evaluates the phase noise and other relevant parameters for RF signals and provides precise and accurate measurements in one box. This analyzer enables absolute and residual phase noise measurements with the built-in, clean internal signal source and advanced path delay compensation technology. |
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Multi-Probe Antenna Measurement System from 400 MHz to 6 GHz |
Antenna Measurement System
from Microwave Vision Group
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The SG 24 from MVG is a Multi-Probe Antenna Measurement System for frequencies from 400 MHz to 6 GHz (extendable to 10 GHz). It has a dynamic range of 70 dB (from 0.4 – 6 GHz) and a measurement time of approximately 1 minute. This antenna measurement system uses near-field/spherical or far-field technology to measure parameters such as gain, directivity, beamwidth, cross-polar discrimination, sidelobe levels, front-to-back ratio, 1D, 2D and 3D radiation patterns, radiation pattern in any polarization (linear or circular), and more. |
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10 m Test Range Semi-Anechoic Chamber from 30 MHz to 40 GHz |
Anechoic Chamber
from TDK RF Solutions
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The 10 m Test Range Semi-Anechoic Chamber from TDK Corporation can be used to test products that operate at a frequency range from 30 MHz to 40 GHz (EMI) and 26 MHz to 19 GHz (EMS). It has been designed to perform radiated emission and immunity measurements of RF signals over a distance of up to 10 m. This chamber is fully compliant with ANSI C63.4, EN 50147-2, and CISPR 22 standards. |
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200 W Rackmount Solid-State Power Amplifier from 6 to 18 GHz |
RF Amplifier
from Ophir RF
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The 4151 from Ophir RF is a Solid-State Power Amplifier (SSPA) that operates from 6.0 to 18 GHz. It delivers a saturated output power of 250 W with a small signal gain of more than 54 dB and supports CW/AM/FM/PM/Pulse input signal formats. This amplifier utilizes Class A/AB linear power devices that provide an excellent 3rd-order intercept point, high gain, and a wide dynamic range. |
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Automotive-Grade One-Chip Radar SoCs for Collision Avoidance Applications |
Automotive Radar Chipset
from NXP Semiconductors
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The SAF86xx from NXP Semiconductors are One-Chip RFCMOS Radar SoCs that support future distributed automotive radar architectures. They operate from 76 to 81 GHz and have a total bandwidth of 5 GHz. These SoCs consist of 4 transmitters, 4 receivers, ADC conversion, phase rotator, low phase noise VCO, BBE32EP DSP processor, ARM Cortex-M7 core, and SRAM memory to support various use cases in short-range, medium-range, and long-range automotive radar applications. |
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2.4/5/6 GHz Integrated Wi-Fi 7 + Bluetooth® 5.4 + UWB Module |
Wireless Chipset
from Qualcomm
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The FastConnect 7900 from Qualcomm is a 2.4/5/6 GHz Integrated Wi-Fi 7 + Bluetooth® 5.4 + Ultra-Wideband (UWB) Module. It supports a range of technologies to enable users with comprehensive proximity awareness capabilities. This module implements High Band Simultaneous (HBS) Multi-Link with UWB and Bluetooth Channel Sounding to seamlessly find nearby devices like earbuds, smart tags, or other mobile devices. |
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Rugged 50 GHz Fixed Chip Attenuators for Space and Defence Applications |
Fixed Attenuator
from Smiths Interconnect
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The HR TXS Series from Smiths Interconnect are Fixed Chip Attenuators that operate up to 50 GHz. They are available in attenuation values from 1 to 20 dB and can handle input power of up to 3 W. These chip attenuators use robust thin-film process technology on an alumina substrate to provide a product suitable for harsh environments, such as space and defence applications. |
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InP-Based Low Noise Amplifier MMIC from 71 to 86 GHz |
RF Amplifier
from Northrop Grumman
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The ALP291 from Northrop Grumann is an E-band Low Noise Amplifier MMIC that operates from 71 to 86 GHz. It provides a small signal linear gain of 28 dB with a noise figure of less than 3.2 dB and has a P1dB of 3 dBm. This amplifier is based on the 0.1 µm InP HEMT process and has a microstrip topology. |
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Spinning Direction Finding Antenna from 2 to 18 GHz |
Direction Finding Antenna
from Steatite Antennas
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The QEL-ST-2-18-N-SG-R from Steatite Antennas is a Cylindrical Paraboloid Direction Finding Antenna that operates from 2 to 18 GHz. This horizontally/vertically or ±45°-polarized antenna provides a gain of 13-24 dBi and has a VSWR of less than 2.5:1. It is mounted on a high-speed rotating direct drive positioner that rotates at a speed of less than 200 rpm and includes mechanisms for complex scan control. |
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Adhesive-Mount Omnidirectional PCB Antenna from 698 to 2700 MHz |
Antenna
from TE Connectivity
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The 2118308-1 from TE Connectivity is a PCB Antenna that operates from 698 to 2700 MHz. This linearly polarized antenna has an omnidirectional radiation pattern, provides a peak gain of 3.9 dBi, and has a VSWR of less than 3.0:1. It is available in an adhesive-mount package that measures 110.0 x 14.0 x 1.31 mm with MHF, MHF1, U.FL and UMCC connection options. |
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Planar Monopole Antennas from 5.85 to 8.25 GHz for UWB Applications |
Antenna
from Ezurio
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The NanoUWB Series from Laird Connectivity are Planar Monopole Antennas that operate from 5850 to 8250 MHz. These linearly-polarized antennas provide a peak gain of up to 3.9 dBi with an efficiency of more than 64% and have a VSWR of less than 2.5:1. They have been designed to operate with Laird’s Sera NX040 UWB module and include a rigid monopole design that supports UWB implementations. |
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2.4 GHz Wi-Fi 7 Front End Module |
Front End Module
from Qorvo
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The QPF4259 from Qorvo is a 2.4 GHz Wi-Fi 7 Front End Module. It has an integrated 2.4 GHz power amplifier (PA), single pole two throw switch (SP2T) and bypassable low noise amplifier (LNA). The FEM has a coupler with RF output as well as a broad range, constant slope voltage RF and DC logarithmic power detector for application feedback. |
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