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Latest RF & Microwace Products this Week |
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USB Programmable Signal Generator from 6 to 18 GHz |
Signal Generator
from Vaunix
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The LMS-183CX from Vaunix is a USB Programmable RF Signal Generator that operates from 6 to 18 GHz. It has a resolution of 100 Hz and switching time of 0.02 ms. The signal generator provides calibrated power control from -70 dBm to 10 dBm (80 dB dynamic range) in 0.5 dB steps. It has a phase noise of better than -130 dBc/Hz at 6 GHz, spurious levels of lower than -55 dBc and harmonics of less than -35 dBc. |
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Product Details
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6-Way Power Divider from 6 to 18 GHz |
Power Divider
from UMCC
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The PD-NS00-6S from UMCC is a 6-Way Power Divider that operates from 6 to 18 GHz. This power splitter can handle an average input power of up to 10 W, has an insertion loss of under 2.5 dB and provides an isolation of over 16 dB. It has an amplitude balance of ± 0.4 dB and a phase balance of ±5°. This 50-ohm divider is available in a module with SMA-female connectors and is ideal for both commercial and military applications. |
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Product Details
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2.4/5 GHz Dual-Band 4x4 Wi-Fi 6 (802.11ax) SoC |
Wireless SoC
from NXP Semiconductors
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The 88W9064 from NXP is a 2.4/5 GHz Dual-Band 4x4 Wi-Fi 6 (802.11ax) SoC. It has integrated MU-MIMO and OFDMA solutions that help increase capacity for downlink and uplink traffic to allow for overall improved network utilization while meeting the growing demands of user applications. This SoC includes integrated Bluetooth 5.0 and a precision device location function that provides accurate positioning within 1 meter and 10 degrees. It is ideal for use in enterprise & retail access points, broadband gateway, fixed wireless, service provider set-top box, and over-the-top set-top box. |
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Product Details
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1000 W Pulsed Amplifier from 2.7 to 3.1 GHz |
RF Amplifier
from RFHIC
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The RRP27311K0-24 from RFHIC is an RF Amplifier designed for Radars that operates from 2.7 to 3.1 GHz. It delivers a pulsed output power of 1000 W with a gain of 24 dB and has a typical efficiency of 45%. The amplifier has a rise/fall time of less than 100 ns, pulse width from 1 to 100 µs and a duty cycle of up to 10%. It uses GaN HEMT technology which ensures high breakdown voltage, wide bandwidth, and high efficiency. |
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Product Details
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