| New RF and Microwave Products this Week |
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| RF Signal Generator (non-PLL Architecture) from 10 MHz to 6 GHz | |
Signal Generator
from Boonton
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| The SGX1006 from Boonton is an RF Signal Generator that operates from 10 MHz to 6.4 GHz with a step size of 0.001 Hz. It can provide an output power of up to 16 dBm with a resolution of 0.01 dB and has a single sideband phase noise of -122 dBc/Hz. The generator utilizes a unique non-PLL (phase locked loop) design with a digital front-end and proprietary back end to provide ultra-fine frequency resolution, lightning-fast frequency switching, ultra-low phase noise and jitter, and superior reliability. |
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| 500 W HF/VHF LDMOS Transistor from 10 to 700 MHz | |
RF Transistor
from Ampleon
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| The BLF974P from Ampleon is an HF/VHF LDMOS Transistor that operates from 10 to 700 MHz. It has a P1dB of 500 W and provides 25.7 dB of power gain with a drain efficiency of up to 77%. This transistor requires a drain-source voltage of 50 V and includes integrated ESD protection with excellent thermal stability. It is ideal for broadcast transmitter, industrial, scientific and medical applications. |
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| GaN Low-Noise Amplifier MMIC from 5 to 18 GHz | |
RF Amplifier
from VIPER RF
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| The VRFA0105-BD from Viper RF is a GaN HEMT Low-Noise Amplifier MMIC that operates from 5 to 18 GHz. It provides a linear gain of 12 dB with a noise figure of less than 7 dB and has a P1dB of more than 10 dBm. The LNA requires a DC supply of 12 V and consumes less than 4 W of power. The amplifier is ideal for use in point-to-point radios, VSAT, radar, and test & instrumentation applications. |
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| Low G-Sensitivity VCXOs from 80 to 125 MHz | |
VCXO
from NEL Frequency Controls
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| The AB-X32APXXX20-X Series from NEL Frequency Controls are Ultra-Low Phase Noise VCXOs that operate from 80 to 125 MHz. These low G-Sensitivity oscillators provide a sine-wave or CMOS output with frequency stability of ±10 ppm over a temperature range from -40 to 85°C and G sensitivity of 0.2 ppb/G. They have an SSB phase noise of -160 dBc/Hz @10 kHz offset, spurious levels of less than -80 dBc, and harmonics of -30 dBc. |
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| Differential MEMS Crystal Oscillator from 25 to 325 MHz | |
XO
from SiTime
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| The SiT9365 from SiTime is a Differential MEMS Crystal Oscillator that operates from 25 to 325 MHz. It provides LVPECL, LVDS, and HCSL outputs with a frequency stability of ±10 ppm. This oscillator is based on SiTime’s unique DualMEMS® temperature sensing and TurboCompensation® technology and is designed for low-jitter applications. It delivers exceptional dynamic performance of 0.23 ps jitter (typ.) and stable timing in the presence of common environmental hazards, such as shock, vibration, power supply noise, and EMI. |
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| 50 W Fixed Attenuators from DC to 3 GHz | |
Fixed Attenuator
from JFW Industries
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| The 50FH-XXX-50-3 from JFW Industries are Fixed Attenuators that operates from DC to 3 GHz. They are available for attenuation values ranging from 1 to 50 dB and have a VSWR of less than 1.4:1. These 50-ohm attenuators can handle up to 50 watts of average power and 1000 watts of peak power. They have an integrated heatsink and are available with BNC, N, SMA, TNC, 4.1/9.5, 4.3/10 and 7/16 connector options. |
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| RF Shielded Test Enclosure for Applications up to 65 GHz | |
RF Shielded Test Enclosure
from RF Electronics
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| The HDRF-1770 from RF Electronics is an RF Shielded Test Enclosure that can be used at frequencies up to 65 GHz. It has a thick RF absorbing foam that attenuates standing waves and reflections, providing more than 90 dB of isolation above 6 GHz. The enclosure has shielded power filters which can be used to power devices placed inside the enclosure while blocking all wireless signals. It is equipped with V232-coaxial adapters that can be used from DC to 65 GHz and Waveguide Bulkhead Adapters that can be used from 18 to 110 GHz. |
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| Three-Stage Power Amplifier Die from 71 to 76 GHz | |
RF Amplifier
from Northrop Grumman
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| The APH668 from Northrop Grumman is a Three-Stage Power Amplifier that operates from 71 to 76 GHz. It delivers a saturated output power of 28 dBm with a linear gain of more than 16.5 dB and has a power-added efficiency (PAE) of 22%. This amplifier is manufactured using GaAs pHEMT technology and is fully passivated to ensure rugged and reliable operation. It requires a DC supply voltage of 4 V and consumes less than 630 mA of current. |
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| 100 Km LoRa/LoRaWAN IoT Module from 860 to 1020 MHz | |
RF Module
from Miromico
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| The FMLR STM SX1272 from Miromico is a LoRa and LoRaWAN IoT Module that operates from 860 to 1020 MHz covering the ISM bands. It has a line-of-sight range of up to 100 km. This module has a Tx power of up to 19.5 dBm and an Rx sensitivity of -137 dBm. It is based on Semtech’s SX1272 transceiver and is ideal for long-range, low data rate IoT sensors, asset tracking & monitoring, smart agriculture, farming and smart city applications. |
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| 110 GHz Fine-Pitch Multi-Contact RF Probe Solution | |
RF Probe
from FormFactor Inc.
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| The InfinityQuad from FormFactor is an RF Probe solution that can measure signal paths up to 110 GHz. It is designed for repeatable and precise engineering and production of DC, logic, RF, and mmWave RFIC devices and provides wide bandwidth for RF/Microwave or high-speed digital connections. This RF probe can handle an RF power of up to 4 W and has 4-25 DC/RF/power/ground/logic contacts with a pitch ranging from 75 to 250 µm. |
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