NXP Semiconductors introduced a series of four new RF LDMOS Transistors that aim to deliver best-in class performance for defense radar and identification friend or foe (IFF) systems operating between 900 and 1400 MHz. Several defense contractors are currently developing and evaluating systems with these new high capability transistors.
The high RF output power from the four new transistors help the U.S. Department of Defense (DoD) and its international partners reach goals to reduce size, weight and power (SWaP) of its platforms by allowing amplifiers to use fewer devices to achieve a desired performance. This not only reduces amplifier size and board space but the bill of material (BOM).
These transistors allow designers of radar and IFF systems to deliver greater performance making them a perfect fit for next generation defense platforms.
New RF High Power LDMOS Transistors
MMRF1312H/HS – Typical applications are IFF Mode S interrogators, L-band secondary surveillance radars, and distance measuring equipment (DME). This device operates from 900 to 1215 MHz at 52 V with a peak RF output power of at least 1200 W at P3dB, gain of 17.3 dB and efficiency of 54%.
MMRF1314H/HS – Typical application is L-band primary radar. This device operates from 1200 to 1400 MHz at 52 V with a peak RF output power of at least 1000 W, gain of 15.5 dB and efficiency of 46.5%.
MMRF1317H/HS – Typical applications are IFF Mode S interrogators and secondary surveillance radars. This device operates from 1030 to 1090 MHz at 50 V with a peak RF output power of at least 1500 W at P3dB (the highest power available at this frequency range using LDMOS technology), gain of 18.9 dB and efficiency of 56%.
MMRF2010N/GN – Typical applications are IFF Mode S interrogators and secondary surveillance radars. This device operates from 1030 to 1090 MHz at 50 V with a peak RF output power of 250 W, gain of 32.5 dB and efficiency of 59.1%. The MMRF2010N/GN is housed in an over-molded plastic package and the three other transistors are housed in ceramic air-cavity packages.
Exceptional Ruggedness
RF amplifiers used in defense systems are often subject to potentially damaging conditions such as high impedance mismatches (high VSWR) and input overdrive caused by co-site interference. However, the four new transistors are designed to excel under these conditions. For example, the MMRF1312H/HS and MMRF1314H/HS will operate into a VSWR greater than 20:1 and the MMRF1317H/HS and the MMRF2010N will operate into a VSWR greater than 10:1 at 20 percent higher than rated supply voltage and twice their rated input power without damage.
Availability
These high power RF transistors expand NXP's LDMOS and GaN portfolio intended for defense applications. All of these devices are part of the company’s Product Longevity Program guaranteeing their availability for 15 years. The MMRF1312H/HS, MMRF1314H/HS, MMRF1317H/HS and MMRF2010N RF power LDMOS transistors are in production. Reference designs and other enablement tools are available. For pricing or additional information, you can contact your local NXP sales office or NXP approved distributor.
