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AM010WX-BI-R

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The AM010WX-BI-R from AMCOM Communications, Inc. is a RF Transistor with Frequency DC to 12 GHz, Power 28.5 dBm, Power(W) 0.71 W, P1dB 27.5 dBm, Power Gain (Gp) 14 to 16 dB. Tags: Flanged. More details for AM010WX-BI-R can be seen below.

Product Specifications

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Product Details

  • Part Number
    AM010WX-BI-R
  • Manufacturer
    AMCOM Communications, Inc.
  • Description
    Ceramic Packaged GaAs Power pHEMT DC-12 GHz

General Parameters

  • Transistor Type
    pHEMT
  • Technology
    GaAs
  • Application Industry
    Wireless Infrastructure, Radar, Broadcast
  • Application
    Cellular, Radio, Repeater, C Band, VSAT, Radar
  • CW/Pulse
    CW
  • Frequency
    DC to 12 GHz
  • Power
    28.5 dBm
  • Power(W)
    0.71 W
  • P1dB
    27.5 dBm
  • Power Gain (Gp)
    14 to 16 dB
  • Supply Voltage
    28 V
  • Breakdown Voltage - Drain-Source
    15 to 20 V
  • Drain Bias Current
    150 mA
  • Thermal Resistance
    80 °C/W
  • Package Type
    Flanged
  • Package
    Ceramic
  • RoHS
    Yes
  • Operating Temperature
    -55 to 85 Degree C

Technical Documents
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